Ke Xu, MD
Professor of PsychiatryCards
Appointments
Additional Titles
Director of Stress Epigenetics, Yale Stress Center
Contact Info
Appointments
Additional Titles
Director of Stress Epigenetics, Yale Stress Center
Contact Info
Appointments
Additional Titles
Director of Stress Epigenetics, Yale Stress Center
Contact Info
About
Titles
Professor of Psychiatry
Director of Stress Epigenetics, Yale Stress Center
Biography
Dr. Xu is a Professor of Psychiatry at Yale School of Medicine and holds a position as Staff Psychiatrist at the VA Connecticut Healthcare System. Her research is dedicated to exploring the complex interactions between stress and the epigenome, aiming to uncover how these interactions contribute to the development of stress-related symptoms and disorders such as substance use. This important work has led Dr. Xu to investigate a broad spectrum of behavioral and medical conditions in diverse populations. Dr. Xu is engaged in the field of social epigenomics that helps us understanding the biological underpinnings of the effects of social environments on health.
Appointments
Psychiatry
ProfessorPrimaryBiomedical Informatics & Data Science
ProfessorSecondary
Other Departments & Organizations
- Biomedical Informatics & Data Science
- Division of Addictions
- Division of Mental Health Services
- Neuroscience Research Training Program (NRTP)
- Psychiatry
- Xu Lab
- Yale Center for the Science of Cannabis and Cannabinoids
- Yale Stress Center
- Yale Ventures
- Yale-UPR Integrated HIV Basic and Clinical Sciences Initiative
Education & Training
- Resident
- Yale School of Medicine (2011)
- MD
- West China College of Medicine, Sichuan University (2007)
Research
Overview
Medical Subject Headings (MeSH)
ORCID
0000-0003-2628-2061
Research at a Glance
Yale Co-Authors
Rajita Sinha, PhD
Amy Justice, MD, PhD
Zachary Harvanek, MD/PhD
Christopher T Rentsch, PhD, FISPE
Hang Zhou, PhD
Joel Gelernter, MD
Publications
2024
Improved surface morphology and reduced V-pits density of lattice-matched AlInN films grown by atmospheric pressure metalorganic chemical vapor deposition
Fan S, Ikeda M, Zhang B, Li Z, Su X, Liu Z, Xu K. Improved surface morphology and reduced V-pits density of lattice-matched AlInN films grown by atmospheric pressure metalorganic chemical vapor deposition. Journal Of Alloys And Compounds 2024, 1007: 176406. DOI: 10.1016/j.jallcom.2024.176406.Peer-Reviewed Original ResearchConceptsMetalorganic chemical vapor depositionChemical vapor depositionSurface morphologyVapor depositionPressure metalorganic chemical vapor depositionSevere parasitic reactionsAtmospheric pressure metalorganic chemical vapor depositionAtmospheric-pressure metalorganic chemical vapor depositionIn-plane uniformityLow surface roughnessV-pit densityExcellent surface morphologyAtomic force microscopyGaN/AlInN interfacesParasitic reactionsSurface roughnessGrowth temperatureSecond-order reaction modelReduced roughnessFilm thicknessAlInN filmsForce microscopyRoughness valuesCrystalline qualityElectronic devicesFrequent Cocaine Use is Associated With Larger HIV Latent Reservoir Size
Aouizerat B, Garcia J, Domingues C, Xu K, Quach B, Page G, Konkle-Parker D, Bolivar H, Lahiri C, Golub E, Cohen M, Kassaye S, DeHovitz J, Kuniholm M, Archin N, Tien P, Hancock D, Johnson E. Frequent Cocaine Use is Associated With Larger HIV Latent Reservoir Size. JAIDS Journal Of Acquired Immune Deficiency Syndromes 2024, 97: 156-164. PMID: 39250649, DOI: 10.1097/qai.0000000000003472.Peer-Reviewed Original ResearchCitationsConceptsHIV latent reservoirImpact of cocaine useCocaine useT cellsAssociated with higher HIV viral loadHigher HIV viral loadSelf-reported cocaine useHIV DNA assaysLatent reservoir sizeRapid HIV progressionVirologically suppressed womenHIV viral loadFrequent cocaine useVirally suppressed PLWHHistory of HIVLatent reservoirAntiretroviral therapyHIV progressionLongitudinal cohort studyViral loadCocaine usersNever usersIntact provirusesCohort studyCD4Leakage current in GaN-on-GaN vertical GaN SBDs grown by HVPE on native GaN substrates
Jin W, Zhang Y, Xia S, Zhu Q, Sun Y, Yi J, Wang J, Xu K. Leakage current in GaN-on-GaN vertical GaN SBDs grown by HVPE on native GaN substrates. AIP Advances 2024, 14: 095118. DOI: 10.1063/5.0208706.Peer-Reviewed Original ResearchConceptsSchottky barrier diodesGaN Schottky barrier diodesVertical GaN-on-GaN Schottky barrier diodesPoole–Frenkel emissionNative GaN substratesVertical GaN Schottky barrier diodesGaN substratesBarrier diodesDefect etchingLeakage currentOptimal fabrication processLeakage mechanismFabricated deviceForeign substratesFabrication processEmissionPassive techniquesGrowth and characterization of micro-LED based on GaN substrate
Wang G, Huang J, Wang Y, Tao T, Zhu X, Wang Z, Li K, Wang Y, Su X, Wang J, Liu B, Cao B, Xu K. Growth and characterization of micro-LED based on GaN substrate. Optics Express 2024, 32: 31463. DOI: 10.1364/oe.529771.Peer-Reviewed Original ResearchConceptsExternal quantum efficiencyMicro-LED chipResidual stressDislocation densityMicro-LEDsGaN-based micro-LEDReduced dislocation densityCarrier injectionQuantum efficiencyDislocation phenomenaHigher uniformitySuperior uniformityMicro-LED technologyGaN substratesPit distributionDominant mechanismChipDislocationHigh brightnessUniformityUltra-low-defect homoepitaxial micro-LEDs with enhanced efficiency and monochromaticity for high-PPI AR/MR displays
Liu Y, Wang G, Feng F, Zhanghu M, Yuan Z, Li Z, Xu K, Kwok H, Liu Z. Ultra-low-defect homoepitaxial micro-LEDs with enhanced efficiency and monochromaticity for high-PPI AR/MR displays. PhotoniX 2024, 5: 23. DOI: 10.1186/s43074-024-00137-4.Peer-Reviewed Original ResearchCitationsAltmetricConceptsGaN-on-GaNOptoelectronic propertiesEfficiency droop ratioEmission wavelengthMicro-LEDsGaN-on-sapphireCrystal qualityMicro-displaysCm-2High luminanceMicro-display applicationsMicro-LED devicesGaN substratesSapphire substratesDroop ratioEfficiency droopSeries resistanceGallium nitrideEnhanced efficiencyStrong ambient lightArtificial Intelligence Applications in Oral Cancer and Oral Dysplasia
Viet C, Zhang M, Dharmaraj N, Li G, Pearson A, Manon V, Grandhi A, Xu K, Aouizerat B, Young S. Artificial Intelligence Applications in Oral Cancer and Oral Dysplasia. Tissue Engineering Part A 2024 PMID: 39041628, DOI: 10.1089/ten.tea.2024.0096.Peer-Reviewed Original ResearchCitationsAltmetricConceptsOral squamous cell carcinomaOral epithelial dysplasiaPredictive biomarkersMalignant transformation of oral epithelial dysplasiaOral squamous cell carcinoma outcomesOSCC behaviorTransformation to oral squamous cell carcinomaClinical challengeOral epithelial dysplasia patientsOSCC survivalPrecursors of oral squamous cell carcinomaTumor immune microenvironmentSquamous cell carcinomaImmune cell patternsEpithelial dysplasiaOral dysplasiaImmune microenvironmentCell carcinomaImproved survivalMultiplex immunohistochemistryOral cancerOSCC patientsTreatment responsePoor outcomeDisfiguring treatmentStep-edge-guided nucleation and growth mode transition of α-Ga2O3 heteroepitaxy on vicinal sapphire
Hao J, Zhang Y, Zhang Y, Xu K, Han G, Ye J. Step-edge-guided nucleation and growth mode transition of α-Ga2O3 heteroepitaxy on vicinal sapphire. Chinese Physics B 2024, 33: 086104. DOI: 10.1088/1674-1056/ad4ff6.Peer-Reviewed Original ResearchConceptsGrowth mode transitionGrowth modeDislocation densityTerrace widthCm-2Epitaxial growth modeIncreased dislocation densityNeighboring nucleiFlat sapphire surfaceTwo-dimensional (2DSurface morphology degradationSubstrate terracesVicinal sapphireMaterial propertiesSurface roughnessTerrace edgesDevice performanceMiscut angleCoherent growthSapphire substratesSemiconductor layerEdge dislocationsHeteroepitaxial layersMode transitionNucleation distanceComparative analysis of microstructure, electrical and optical performance in sidewall etching process for GaN-based green micro-LED
Li X, Su X, Wang G, Chen J, Wang L, Song W, Xu K. Comparative analysis of microstructure, electrical and optical performance in sidewall etching process for GaN-based green micro-LED. Journal Of Physics D 2024, 57: 375108. DOI: 10.1088/1361-6463/ad55f9.Peer-Reviewed Original ResearchConceptsKelvin probe force microscopeGeometric phase analysisTransmission electron microscopyExternal quantum efficiencyTime-resolved photoluminescenceInductively coupled plasmaOptical performanceSidewall defectsEvolution of microstructureInductively coupled plasma etchingTetramethylammonium hydroxide treatmentBuild-in electric fieldMicro-LEDsNon-radiative recombination lossesGreen micro-LEDsSemi-polar surfacesSurface lattice relaxationSurface dangling bondsTetramethylammonium hydroxideNon-radiative recombination mechanismsNon-radiative recombination rateChip sizeTetramethylammonium hydroxide solutionForce microscopeEtching process60‐4: Minimal Efficiency Degradation and Elevated Radiometric Power Density of Ultraviolet‐A Micro‐LED with Homoepitaxial Structure
Liu Y, Wang G, Feng F, Li Z, Liu Z, Xu K, Kwok H, Liu Z. 60‐4: Minimal Efficiency Degradation and Elevated Radiometric Power Density of Ultraviolet‐A Micro‐LED with Homoepitaxial Structure. SID Symposium Digest Of Technical Papers 2024, 55: 828-831. DOI: 10.1002/sdtp.17658.Peer-Reviewed Original ResearchSize-Dependent Characteristics of High-Bandwidth Photodetector Based on GaN Micro-LEDs and LEDs for High-Speed Visible Light Communication
Liao Y, Shan X, Rao Z, Wang G, Lin R, Cui X, Xu K, Tian P. Size-Dependent Characteristics of High-Bandwidth Photodetector Based on GaN Micro-LEDs and LEDs for High-Speed Visible Light Communication. Journal Of Lightwave Technology 2024, 42: 5902-5909. DOI: 10.1109/jlt.2024.3407777.Peer-Reviewed Original ResearchConceptsSize-dependent characteristicsHigh-speed visible light communicationHigh data ratePotential data rateHigh-speed VLC systemVisible light communicationOFDM schemeVLC systemEffect of bandwidthHigh-bandwidth photodetectorsData rateLight communicationBandwidth characteristicsGaN micro-LEDPD arrayHighest photocurrentIncident powerOptimized photodetectorHigh bandwidthPhotodetectorsOptimal sizeMicro-LEDsGbpsSize of photodetectorBandwidth
Clinical Trials
Current Trials
A longitudinal study of the effects of cannabis exposure on neuro-development in adolescents and young adults
HIC ID2000024543RoleSub InvestigatorPrimary Completion Date01/31/2021Recruiting ParticipantsGenderBothAge13 years - 25 years
Academic Achievements & Community Involvement
honor Lustman Resident Research Award: the first place
Yale School of Medicine AwardDetails06/10/2011United Stateshonor APA/Merck &Co Early Academic Career Research Award
National AwardDetails05/12/2011United States
News
News
- May 20, 2024Source: Journal of Behavioral Medicine
Childhood Adversity, Accelerated GrimAge, and Associated Health Consequences
- December 07, 2023
VA/Yale Researchers Lead Multi-ancestry Study of Genetics of Problematic Alcohol Use
- July 24, 2023Source: Neurobiology of Stress
Greater Stress and Trauma Mediate Race-Related Differences in Epigenetic Age Between Black and White Young Adults in a Community Sample
- March 15, 2022
Alcohol Consumption Changes the Aging Clock