2024
Optical characterization of GaN:Eu microcrystals grown by the ammonothermal method
Xie K, Li T, Ren G, Wang L, Lu W, Shen L, Zhou H, Xu K. Optical characterization of GaN:Eu microcrystals grown by the ammonothermal method. Journal Of Alloys And Compounds 2024, 1008: 176776. DOI: 10.1016/j.jallcom.2024.176776.Peer-Reviewed Original ResearchGlow discharge mass spectrometryTime-resolved photoluminescenceLuminescent sitesPhotoluminescence excitationScanning electron microscopyEu3+ ionsExposed crystal facesEnergy transfer processAmmonothermal methodCharacteristic luminescenceLuminescence propertiesWurtzite crystal structureO2- ionsCrystal structureExcitation wavelengthMass spectrometryCrystal facesLuminescenceEu concentrationMicrocrystalsLuminescence peakPhotoluminescenceTransfer processOptical characterizationEu0Improved surface morphology and reduced V-pits density of lattice-matched AlInN films grown by atmospheric pressure metalorganic chemical vapor deposition
Fan S, Ikeda M, Zhang B, Li Z, Su X, Liu Z, Xu K. Improved surface morphology and reduced V-pits density of lattice-matched AlInN films grown by atmospheric pressure metalorganic chemical vapor deposition. Journal Of Alloys And Compounds 2024, 1007: 176406. DOI: 10.1016/j.jallcom.2024.176406.Peer-Reviewed Original ResearchMetalorganic chemical vapor depositionChemical vapor depositionSurface morphologyVapor depositionPressure metalorganic chemical vapor depositionSevere parasitic reactionsAtmospheric pressure metalorganic chemical vapor depositionAtmospheric-pressure metalorganic chemical vapor depositionIn-plane uniformityLow surface roughnessV-pit densityExcellent surface morphologyAtomic force microscopyGaN/AlInN interfacesParasitic reactionsSurface roughnessGrowth temperatureSecond-order reaction modelReduced roughnessFilm thicknessAlInN filmsForce microscopyRoughness valuesCrystalline qualityElectronic devicesA multi-trait epigenome-wide association study identified DNA methylation signature of inflammation among men with HIV
Chen J, Hui Q, Titanji B, So-Armah K, Freiberg M, Justice A, Xu K, Zhu X, Gwinn M, Marconi V, Sun Y. A multi-trait epigenome-wide association study identified DNA methylation signature of inflammation among men with HIV. Clinical Epigenetics 2024, 16: 152. PMID: 39488703, PMCID: PMC11531128, DOI: 10.1186/s13148-024-01763-2.Peer-Reviewed Original ResearchConceptsEpigenome-wide association studiesDNA methylationAssociation studiesDNAm sitesDNA methylation sitesAssociated with DNA methylationDNA methylation signaturesInflammatory markersResponse to virusesImmune response to virusesVeterans Aging Cohort StudySignatures of inflammationGenesIdentified sitesAging Cohort StudyInflammation-related genesPathwayPersistent inflammationMale PWHCohort studyExcess morbidityPWHStudy populationInflammationStatistical powerHBI: a hierarchical Bayesian interaction model to estimate cell-type-specific methylation quantitative trait loci incorporating priors from cell-sorted bisulfite sequencing data
Cheng Y, Cai B, Li H, Zhang X, D’Souza G, Shrestha S, Edmonds A, Meyers J, Fischl M, Kassaye S, Anastos K, Cohen M, Aouizerat B, Xu K, Zhao H. HBI: a hierarchical Bayesian interaction model to estimate cell-type-specific methylation quantitative trait loci incorporating priors from cell-sorted bisulfite sequencing data. Genome Biology 2024, 25: 273. PMID: 39407252, PMCID: PMC11476968, DOI: 10.1186/s13059-024-03411-7.Peer-Reviewed Original ResearchConceptsMethylation quantitative trait lociQuantitative trait lociTrait lociMethylation dataFunctional annotation of genetic variantsAnnotation of genetic variantsGenetic variantsBisulfite sequencing dataEffects of genetic variantsBiologically relevant cell typesDNA methylation levelsCell typesFunctional annotationSequence dataComplex traitsMethylation datasetsRelevant cell typesMeQTLsMethylation levelsMethylation regulatorsReal data analysesLociVariantsMethylationDNAHigh-power AlGaN deep-ultraviolet micro-light-emitting diode displays for maskless photolithography
Feng F, Liu Y, Zhang K, Yang H, Hyun B, Xu K, Kwok H, Liu Z. High-power AlGaN deep-ultraviolet micro-light-emitting diode displays for maskless photolithography. Nature Photonics 2024, 1-8. DOI: 10.1038/s41566-024-01551-7.Peer-Reviewed Original ResearchMicro-light-emitting diodesMicro-LED displayMicro-LEDsMaskless photolithographySuperior light extraction efficiencyPeak external quantum efficiencyLight extraction efficiencyMicro-LED arrayExternal quantum efficiencyElectrical characterizationCircuit driverDeep ultravioletPhotoresist filmSpreading uniformityQuantum efficiencyEmission uniformityPhotolithographySemiconductor industryHeat dispersionMicro-displaysMaximum brightnessReflective layerPhotolithography applicationsOptimal performanceDiodesFrequent Cocaine Use is Associated With Larger HIV Latent Reservoir Size
Aouizerat B, Garcia J, Domingues C, Xu K, Quach B, Page G, Konkle-Parker D, Bolivar H, Lahiri C, Golub E, Cohen M, Kassaye S, DeHovitz J, Kuniholm M, Archin N, Tien P, Hancock D, Johnson E. Frequent Cocaine Use is Associated With Larger HIV Latent Reservoir Size. JAIDS Journal Of Acquired Immune Deficiency Syndromes 2024, 97: 156-164. PMID: 39250649, DOI: 10.1097/qai.0000000000003472.Peer-Reviewed Original ResearchHIV latent reservoirImpact of cocaine useCocaine useT cellsAssociated with higher HIV viral loadHigher HIV viral loadSelf-reported cocaine useHIV DNA assaysLatent reservoir sizeRapid HIV progressionVirologically suppressed womenHIV viral loadFrequent cocaine useVirally suppressed PLWHHistory of HIVLatent reservoirAntiretroviral therapyHIV progressionLongitudinal cohort studyViral loadCocaine usersNever usersIntact provirusesCohort studyCD4Dislocation evolution in anisotropic deformation of GaN under nanoindentation
Chen K, Xue M, Chen R, Dong X, Gao X, Wang J, Han S, Song W, Xu K. Dislocation evolution in anisotropic deformation of GaN under nanoindentation. Applied Physics Letters 2024, 125: 142101. DOI: 10.1063/5.0230366.Peer-Reviewed Original ResearchDislocation evolutionShear stressInduced subsurface damageEnergy storage systemSlip system activityDislocation loopsPeierls-Nabarro stressCritical shear stressAbrasive particlesDislocation nucleationDislocation dynamicsPop-inSubsurface damageMulti-functional devicesCompressive stressDevice performanceMolecular dynamicsTransmission electron microscopyWireless communicationDefect evaluationStorage systemSingle crystalsGaN single crystalsRaman spectroscopyGaN wafersLeakage current in GaN-on-GaN vertical GaN SBDs grown by HVPE on native GaN substrates
Jin W, Zhang Y, Xia S, Zhu Q, Sun Y, Yi J, Wang J, Xu K. Leakage current in GaN-on-GaN vertical GaN SBDs grown by HVPE on native GaN substrates. AIP Advances 2024, 14: 095118. DOI: 10.1063/5.0208706.Peer-Reviewed Original ResearchSchottky barrier diodesGaN Schottky barrier diodesVertical GaN-on-GaN Schottky barrier diodesPoole–Frenkel emissionNative GaN substratesVertical GaN Schottky barrier diodesGaN substratesBarrier diodesDefect etchingLeakage currentOptimal fabrication processLeakage mechanismFabricated deviceForeign substratesFabrication processEmissionPassive techniquesGrowth and characterization of micro-LED based on GaN substrate
Wang G, Huang J, Wang Y, Tao T, Zhu X, Wang Z, Li K, Wang Y, Su X, Wang J, Liu B, Cao B, Xu K. Growth and characterization of micro-LED based on GaN substrate. Optics Express 2024, 32: 31463. DOI: 10.1364/oe.529771.Peer-Reviewed Original ResearchExternal quantum efficiencyMicro-LED chipResidual stressDislocation densityMicro-LEDsGaN-based micro-LEDReduced dislocation densityCarrier injectionQuantum efficiencyDislocation phenomenaHigher uniformitySuperior uniformityMicro-LED technologyGaN substratesPit distributionDominant mechanismChipDislocationHigh brightnessUniformityUltra-low-defect homoepitaxial micro-LEDs with enhanced efficiency and monochromaticity for high-PPI AR/MR displays
Liu Y, Wang G, Feng F, Zhanghu M, Yuan Z, Li Z, Xu K, Kwok H, Liu Z. Ultra-low-defect homoepitaxial micro-LEDs with enhanced efficiency and monochromaticity for high-PPI AR/MR displays. PhotoniX 2024, 5: 23. DOI: 10.1186/s43074-024-00137-4.Peer-Reviewed Original ResearchGaN-on-GaNOptoelectronic propertiesEfficiency droop ratioEmission wavelengthMicro-LEDsGaN-on-sapphireCrystal qualityMicro-displaysCm-2High luminanceMicro-display applicationsMicro-LED devicesGaN substratesSapphire substratesDroop ratioEfficiency droopSeries resistanceGallium nitrideEnhanced efficiencyStrong ambient lightArtificial Intelligence Applications in Oral Cancer and Oral Dysplasia
Viet C, Zhang M, Dharmaraj N, Li G, Pearson A, Manon V, Grandhi A, Xu K, Aouizerat B, Young S. Artificial Intelligence Applications in Oral Cancer and Oral Dysplasia. Tissue Engineering Part A 2024, 30: 640-651. PMID: 39041628, DOI: 10.1089/ten.tea.2024.0096.Peer-Reviewed Original ResearchOral squamous cell carcinomaOral epithelial dysplasiaPredictive biomarkersMalignant transformation of oral epithelial dysplasiaOral squamous cell carcinoma outcomesOSCC behaviorTransformation to oral squamous cell carcinomaClinical challengeOral epithelial dysplasia patientsOSCC survivalPrecursors of oral squamous cell carcinomaTumor immune microenvironmentSquamous cell carcinomaImmune cell patternsEpithelial dysplasiaOral dysplasiaImmune microenvironmentCell carcinomaImproved survivalMultiplex immunohistochemistryOral cancerOSCC patientsTreatment responsePoor outcomeDisfiguring treatmentStep-edge-guided nucleation and growth mode transition of α-Ga2O3 heteroepitaxy on vicinal sapphire
Hao J, Zhang Y, Zhang Y, Xu K, Han G, Ye J. Step-edge-guided nucleation and growth mode transition of α-Ga2O3 heteroepitaxy on vicinal sapphire. Chinese Physics B 2024, 33: 086104. DOI: 10.1088/1674-1056/ad4ff6.Peer-Reviewed Original ResearchGrowth mode transitionGrowth modeDislocation densityTerrace widthCm-2Epitaxial growth modeIncreased dislocation densityNeighboring nucleiFlat sapphire surfaceTwo-dimensional (2DSurface morphology degradationSubstrate terracesVicinal sapphireMaterial propertiesSurface roughnessTerrace edgesDevice performanceMiscut angleCoherent growthSapphire substratesSemiconductor layerEdge dislocationsHeteroepitaxial layersMode transitionNucleation distanceComparative analysis of microstructure, electrical and optical performance in sidewall etching process for GaN-based green micro-LED
Li X, Su X, Wang G, Chen J, Wang L, Song W, Xu K. Comparative analysis of microstructure, electrical and optical performance in sidewall etching process for GaN-based green micro-LED. Journal Of Physics D 2024, 57: 375108. DOI: 10.1088/1361-6463/ad55f9.Peer-Reviewed Original ResearchKelvin probe force microscopeGeometric phase analysisTransmission electron microscopyExternal quantum efficiencyTime-resolved photoluminescenceInductively coupled plasmaOptical performanceSidewall defectsEvolution of microstructureInductively coupled plasma etchingTetramethylammonium hydroxide treatmentBuild-in electric fieldMicro-LEDsNon-radiative recombination lossesGreen micro-LEDsSemi-polar surfacesSurface lattice relaxationSurface dangling bondsTetramethylammonium hydroxideNon-radiative recombination mechanismsNon-radiative recombination rateChip sizeTetramethylammonium hydroxide solutionForce microscopeEtching process60‐4: Minimal Efficiency Degradation and Elevated Radiometric Power Density of Ultraviolet‐A Micro‐LED with Homoepitaxial Structure
Liu Y, Wang G, Feng F, Li Z, Liu Z, Xu K, Kwok H, Liu Z. 60‐4: Minimal Efficiency Degradation and Elevated Radiometric Power Density of Ultraviolet‐A Micro‐LED with Homoepitaxial Structure. SID Symposium Digest Of Technical Papers 2024, 55: 828-831. DOI: 10.1002/sdtp.17658.Peer-Reviewed Original ResearchSize-Dependent Characteristics of High-Bandwidth Photodetector Based on GaN Micro-LEDs and LEDs for High-Speed Visible Light Communication
Liao Y, Shan X, Rao Z, Wang G, Lin R, Cui X, Xu K, Tian P. Size-Dependent Characteristics of High-Bandwidth Photodetector Based on GaN Micro-LEDs and LEDs for High-Speed Visible Light Communication. Journal Of Lightwave Technology 2024, 42: 5902-5909. DOI: 10.1109/jlt.2024.3407777.Peer-Reviewed Original ResearchSize-dependent characteristicsHigh-speed visible light communicationHigh data ratePotential data rateHigh-speed VLC systemVisible light communicationOFDM schemeVLC systemEffect of bandwidthHigh-bandwidth photodetectorsData rateLight communicationBandwidth characteristicsGaN micro-LEDPD arrayHighest photocurrentIncident powerOptimized photodetectorHigh bandwidthPhotodetectorsOptimal sizeMicro-LEDsGbpsSize of photodetectorBandwidthSuppression of the regrowth interface leakage current in AlGaN/GaN HEMTs by Fe doped GaN substrate
Wang X, Lin Z, Sun Y, Yue L, Zhang Y, Wang J, Xu K. Suppression of the regrowth interface leakage current in AlGaN/GaN HEMTs by Fe doped GaN substrate. Science China Information Sciences 2024, 67: 169403. DOI: 10.1007/s11432-024-4003-y.Peer-Reviewed Original ResearchChildhood adversity, accelerated GrimAge, and associated health consequences
Harvanek Z, Kudinova A, Wong S, Xu K, Brick L, Daniels T, Marsit C, Burt A, Sinha R, Tyrka A. Childhood adversity, accelerated GrimAge, and associated health consequences. Journal Of Behavioral Medicine 2024, 47: 913-926. PMID: 38762606, PMCID: PMC11365810, DOI: 10.1007/s10865-024-00496-0.Peer-Reviewed Original ResearchBody mass indexChildhood Trauma QuestionnaireGrimAge accelerationEarly life stressChildhood adversityAssociated with higher body mass indexCross-sectional cohort of adultsMetabolic healthEffect of body mass indexHigher body mass indexPhysical health problemsLife stressCohort of adultsAssociated health consequencesEffects of early life stressMetabolic health effectsModerating effect of body mass indexChildhood Trauma Questionnaire subscalesCross-sectional cohortCardiometabolic healthAccelerated GrimAgeCardiometabolic diseasesMedical illnessHealth consequencesMass indexAuthor Correction: A multi-ancestry genetic study of pain intensity in 598,339 veterans
Toikumo S, Vickers-Smith R, Jinwala Z, Xu H, Saini D, Hartwell E, Pavicic M, Sullivan K, Xu K, Jacobson D, Gelernter J, Rentsch C, Stahl E, Cheatle M, Zhou H, Waxman S, Justice A, Kember R, Kranzler H. Author Correction: A multi-ancestry genetic study of pain intensity in 598,339 veterans. Nature Medicine 2024, 30: 2088-2088. PMID: 38714900, DOI: 10.1038/s41591-024-03024-4.Peer-Reviewed Original ResearchEffect of Heat Treatment on Microstructure and Properties of Fe-Nb-C Alloying Layer
Ye F, Zhu Y, Yan L, Xie Y, Yin Z, Liu L, Bian P, Xu K. Effect of Heat Treatment on Microstructure and Properties of Fe-Nb-C Alloying Layer. Integrated Ferroelectrics 2024, 240: 701-715. DOI: 10.1080/10584587.2024.2325869.Peer-Reviewed Original ResearchEffect of heat treatmentWear resistanceCorrosion resistanceHeat treatmentAlloy layerStainless steelSelf-corrosion current densityThickness of alloy layerIncrease of heat treatment temperatureLaser-alloyed specimensWear weight lossHeat-affected zoneField emission scanning electron microscopeGrain boundary corrosionSelf-corrosion potentialEmission scanning electron microscopeHigh temperature resistanceHeat treatment temperatureHigh temperature environmentX-ray diffractometerIron-based alloysScanning electron microscopeWear testerHot crackingElectrochemical workstationGreater Stress and Trauma Mediate Race-Related Differences in Epigenetic Age Between Black and White Young Adults in a Community Sample
Holloway T, Harvanek Z, Xu K, Gordon D, Sinha R. Greater Stress and Trauma Mediate Race-Related Differences in Epigenetic Age Between Black and White Young Adults in a Community Sample. Biological Psychiatry 2024, 95: s41. DOI: 10.1016/j.biopsych.2024.02.104.Peer-Reviewed Original Research