Dislocation evolution in anisotropic deformation of GaN under nanoindentation
Chen K, Xue M, Chen R, Dong X, Gao X, Wang J, Han S, Song W, Xu K. Dislocation evolution in anisotropic deformation of GaN under nanoindentation. Applied Physics Letters 2024, 125: 142101. DOI: 10.1063/5.0230366.Peer-Reviewed Original ResearchDislocation evolutionShear stressInduced subsurface damageEnergy storage systemSlip system activityDislocation loopsPeierls-Nabarro stressCritical shear stressAbrasive particlesDislocation nucleationDislocation dynamicsPop-inSubsurface damageMulti-functional devicesCompressive stressDevice performanceMolecular dynamicsTransmission electron microscopyWireless communicationDefect evaluationStorage systemSingle crystalsGaN single crystalsRaman spectroscopyGaN wafersDislocation slip systems in c-plane and m-plane AlN single crystals under nano-indentation
Chen J, Chen K, Su X, Niu M, Wang Q, Xu K. Dislocation slip systems in c-plane and m-plane AlN single crystals under nano-indentation. Thin Solid Films 2024, 791: 140240. DOI: 10.1016/j.tsf.2024.140240.Peer-Reviewed Original Research