2024
Leakage current in GaN-on-GaN vertical GaN SBDs grown by HVPE on native GaN substrates
Jin W, Zhang Y, Xia S, Zhu Q, Sun Y, Yi J, Wang J, Xu K. Leakage current in GaN-on-GaN vertical GaN SBDs grown by HVPE on native GaN substrates. AIP Advances 2024, 14: 095118. DOI: 10.1063/5.0208706.Peer-Reviewed Original ResearchSchottky barrier diodesGaN Schottky barrier diodesVertical GaN-on-GaN Schottky barrier diodesPoole–Frenkel emissionNative GaN substratesVertical GaN Schottky barrier diodesGaN substratesBarrier diodesDefect etchingLeakage currentOptimal fabrication processLeakage mechanismFabricated deviceForeign substratesFabrication processEmissionPassive techniques
2023
Interband transition physics from the absorption edge in GaN: New prospects from numerical analysis
Han S, Yi J, Song W, Chen K, Zheng S, Zhang Y, Xu K. Interband transition physics from the absorption edge in GaN: New prospects from numerical analysis. AIP Advances 2023, 13: 125016. DOI: 10.1063/5.0180220.Peer-Reviewed Original ResearchAbsorption/emissionElectric fieldOptical logic devicesTunable electric fieldStrong polarization effectsAbundant surface statesQuantum statesTransition physicsAbsorption edgeSurface statesBand structureEmission edgeExperimental absorptionReasonable bandgapBrillouin approximationWentzel-KramersPolarization effectsGaN samplesField strengthLogic devicesNumerical simulationsNonuniform fieldEmissionNon-uniform fieldFieldDefect evolution in GaN thin film heterogeneously integrated with CMOS-compatible Si(100) substrate by ion-cutting technology
Shi H, Yi A, Ding J, Liu X, Qin Q, Yi J, Hu J, Wang M, Cai D, Wang J, Xu K, Mu F, Suga T, Heller R, Wang M, Zhou S, Xu W, Huang K, You T, Ou X. Defect evolution in GaN thin film heterogeneously integrated with CMOS-compatible Si(100) substrate by ion-cutting technology. Science China Information Sciences 2023, 66: 219403. DOI: 10.1007/s11432-022-3668-0.Peer-Reviewed Original Research