Growth and characterization of micro-LED based on GaN substrate
Wang G, Huang J, Wang Y, Tao T, Zhu X, Wang Z, Li K, Wang Y, Su X, Wang J, Liu B, Cao B, Xu K. Growth and characterization of micro-LED based on GaN substrate. Optics Express 2024, 32: 31463. DOI: 10.1364/oe.529771.Peer-Reviewed Original ResearchExternal quantum efficiencyMicro-LED chipResidual stressDislocation densityMicro-LEDsGaN-based micro-LEDReduced dislocation densityCarrier injectionQuantum efficiencyDislocation phenomenaHigher uniformitySuperior uniformityMicro-LED technologyGaN substratesPit distributionDominant mechanismChipDislocationHigh brightnessUniformityNano-indentation study of dislocation evolution in GaN-based laser diodes
Chen J, Su X, Wang G, Niu M, Li X, Xu K. Nano-indentation study of dislocation evolution in GaN-based laser diodes. Discover Nano 2024, 19: 40. PMID: 38453741, PMCID: PMC10920521, DOI: 10.1186/s11671-024-03983-0.Peer-Reviewed Original ResearchSlip systemsBasal slip systemNano-indentation studiesBehavior of dislocationsNano-indentation techniquePyramidal slip planesDensity of dislocationsP-GaN layerDislocation evolutionGaN-based laser diodesMismatch stressBurgers vectorGaN-based LDSlip planesLaser diodeMulti-LayerMotion behaviorStrained layersDislocationLayerDislocation slip systems in c-plane and m-plane AlN single crystals under nano-indentation
Chen J, Chen K, Su X, Niu M, Wang Q, Xu K. Dislocation slip systems in c-plane and m-plane AlN single crystals under nano-indentation. Thin Solid Films 2024, 791: 140240. DOI: 10.1016/j.tsf.2024.140240.Peer-Reviewed Original Research