2024
Dislocation evolution in anisotropic deformation of GaN under nanoindentation
Chen K, Xue M, Chen R, Dong X, Gao X, Wang J, Han S, Song W, Xu K. Dislocation evolution in anisotropic deformation of GaN under nanoindentation. Applied Physics Letters 2024, 125: 142101. DOI: 10.1063/5.0230366.Peer-Reviewed Original ResearchDislocation evolutionShear stressInduced subsurface damageEnergy storage systemSlip system activityDislocation loopsPeierls-Nabarro stressCritical shear stressAbrasive particlesDislocation nucleationDislocation dynamicsPop-inSubsurface damageMulti-functional devicesCompressive stressDevice performanceMolecular dynamicsTransmission electron microscopyWireless communicationDefect evaluationStorage systemSingle crystalsGaN single crystalsRaman spectroscopyGaN wafersLow Dislocation Density Homoepitaxy Ultraviolet-A Micro-LEDs Scale Down to 3 μm
Liu Y, Wang G, Feng F, Li Z, Xu K, Kwok H, Liu Z. Low Dislocation Density Homoepitaxy Ultraviolet-A Micro-LEDs Scale Down to 3 μm. IEEE Electron Device Letters 2024, 45: 641-644. DOI: 10.1109/led.2024.3368513.Peer-Reviewed Original ResearchDislocation densityIn-plane compressive stressHigh dislocation densitySeries resistanceCompressive stressIdeality factorStable emission wavelengthEnhanced crystal qualityEfficiency droopOptoelectronic performanceDevice levelMaterial levelSize effectCrystal qualityHeteroepitaxial substratesUniform emissionLattice mismatchMicro-LEDsHigh stressEmission wavelengthMinimum valueDevicesCm-2DroopSubstrate
2023
Structure and Cathodoluminescence Properties in Tb3+ and Eu3+ Doped AlN Films
Luo X, Wang X, Meng H, Chen H, Zeng X, Gao X, Mao H, Xu K. Structure and Cathodoluminescence Properties in Tb3+ and Eu3+ Doped AlN Films. Physica Status Solidi (a) – Applications And Materials Science 2023, 221 DOI: 10.1002/pssa.202300625.Peer-Reviewed Original ResearchAlN filmsTb 3Non-radiative resonant energy transferEu 3Cathodoluminescence propertiesX-ray diffractionResonant energy transferEnergy transfer mechanismInternal compressive stressIon implantationChromaticity coordinatesRaman scatteringColor temperatureEnergy transferFilmsTransfer mechanismScatteringCrystal structureTb3Dose ratioFirst timeCompressive stressDiffractionAlN hostPropertiesGrowth of Single-Crystalline GaN Films on Ga-Free Langasite-Type Crystals by Metal–Organic Chemical Vapor Deposition
Wang S, Xu J, Wang Y, Su X, Zheng Y, Bao N, Xu K. Growth of Single-Crystalline GaN Films on Ga-Free Langasite-Type Crystals by Metal–Organic Chemical Vapor Deposition. Crystal Growth & Design 2023, 24: 331-338. DOI: 10.1021/acs.cgd.3c01042.Peer-Reviewed Original ResearchMetal-organic chemical vapor depositionGaN filmsChemical vapor depositionSurface acoustic wave devicesVapor depositionSingle crystalline GaN filmsAcoustic wave devicesLGS substrateHigh frequency rangeSAW devicesPiezoelectric propertiesWave devicesGood optical propertiesFilm qualityCompressive stressGaN materialEpitaxial growthGa dropletsMetal nitridesEpitaxial relationshipFilmsGas elementsHigh temperatureLGS crystalMixed dislocations