Silicon Vertically Integrated Nanowire Field Effect Transistors
Goldberger J, Hochbaum A, Fan R, Yang P. Silicon Vertically Integrated Nanowire Field Effect Transistors. Nano Letters 2006, 6: 973-977. DOI: 10.1021/nl060166j.Peer-Reviewed Original ResearchNanowire field-effect transistorsField-effect transistorsEffect transistorsSi nanowire arraysGate field effect transistorSingle-crystalline SiNanowire arraysSilicon nanowiresNanoelectronic devicesDevice fabricationTransistor componentsFacile routeTransistorsElectronic propertiesAssembly processConsiderable attentionChannel diameterNanowiresFurther optimizationFabricationDevicesHereinSiArrayRouteNanofluidic Devices for Sensing and Flow Control
Karnik R, Castelino K, Duan C, Fan R, Yang P, Majumdar A. Nanofluidic Devices for Sensing and Flow Control. 2006, 161-167. DOI: 10.1115/icnmm2006-96156.Peer-Reviewed Original ResearchNanofluidic devicesBiomolecule sizeSurface chargeNanofluidic transistorGate voltageField-effect transistorsNetwork of nanochannelsMetal gate electrodesSilica nanotubesNanofluidic networksStandard lithographyBiomolecule chargesNanofluidic channelsFluidic channelsEffect transistorsNanochannel surfaceFabrication processGate electrodeNanochannelsCarrier concentrationTransistorsFlow controlElectrical conductance measurementsFluorescence imagingElectrostatic interactions