2006
Silicon Vertically Integrated Nanowire Field Effect Transistors
Goldberger J, Hochbaum A, Fan R, Yang P. Silicon Vertically Integrated Nanowire Field Effect Transistors. Nano Letters 2006, 6: 973-977. DOI: 10.1021/nl060166j.Peer-Reviewed Original ResearchNanowire field-effect transistorsField-effect transistorsEffect transistorsSi nanowire arraysGate field effect transistorSingle-crystalline SiNanowire arraysSilicon nanowiresNanoelectronic devicesDevice fabricationTransistor componentsFacile routeTransistorsElectronic propertiesAssembly processConsiderable attentionChannel diameterNanowiresFurther optimizationFabricationDevicesHereinSiArrayRoute
2005
Si Nanowire Bridges in Microtrenches: Integration of Growth into Device Fabrication
He R, Gao D, Fan R, Hochbaum A, Carraro C, Maboudian R, Yang P. Si Nanowire Bridges in Microtrenches: Integration of Growth into Device Fabrication. Advanced Materials 2005, 17: 2098-2102. DOI: 10.1002/adma.200401959.Peer-Reviewed Original Research
2002
INORGANIC SEMICONDUCTOR NANOWIRES
YANG P, WU Y, FAN R. INORGANIC SEMICONDUCTOR NANOWIRES. International Journal Of Nanoscience 2002, 1: 1-39. DOI: 10.1142/s0219581x02000061.Peer-Reviewed Original ResearchNanowire building blocksFabrication of nanoscaleOne-dimensional nanostructuresNovel physical propertiesOptoelectronic devicesCurrent research activitiesOptical propertiesHierarchical assemblyLateral dimensionsNanowiresNanostructuresElectrical transportMechanical propertiesBuilding blocksFunctional componentsNanoscaleFuture research directionsPhysical propertiesFabricationInterconnectsResearch directionsPropertiesIdeal systemDevicesResearch activities