Optimized design of single trench termination combined with P-type buried layers for power MOSFETs
Wang X, Zhou J, Zhang Y, Wang J, Xu K. Optimized design of single trench termination combined with P-type buried layers for power MOSFETs. 2023, 00: 165-168. DOI: 10.1109/sslchinaifws60785.2023.10399693.Peer-Reviewed Original Research