High-power AlGaN deep-ultraviolet micro-light-emitting diode displays for maskless photolithography
Feng F, Liu Y, Zhang K, Yang H, Hyun B, Xu K, Kwok H, Liu Z. High-power AlGaN deep-ultraviolet micro-light-emitting diode displays for maskless photolithography. Nature Photonics 2024, 1-8. DOI: 10.1038/s41566-024-01551-7.Peer-Reviewed Original ResearchMicro-light-emitting diodesMicro-LED displayMicro-LEDsMaskless photolithographySuperior light extraction efficiencyPeak external quantum efficiencyLight extraction efficiencyMicro-LED arrayExternal quantum efficiencyElectrical characterizationCircuit driverDeep ultravioletPhotoresist filmSpreading uniformityQuantum efficiencyEmission uniformityPhotolithographySemiconductor industryHeat dispersionMicro-displaysMaximum brightnessReflective layerPhotolithography applicationsOptimal performanceDiodesFlexible arrays of GaN-based Micro-LEDs fabricated on different substrates by a laser lift-off process
Yue L, Xu J, Wang X, Zhou J, Wang Y, Yao L, Niu M, Wang M, Cao B, Xu Y, Wang J, Xu K. Flexible arrays of GaN-based Micro-LEDs fabricated on different substrates by a laser lift-off process. Japanese Journal Of Applied Physics 2024, 63: 051007. DOI: 10.35848/1347-4065/ad46af.Peer-Reviewed Original ResearchMicro-LED arrayLaser lift-offMicro-LEDsPolyethylene terephthalateLaser lift-off processHigher laser energy densityLift-off processGaN-based micro-LEDLaser energy densityLaser lift‐off technologyBending radiusFlexible displaysLift-offThreshold voltageCopper foilGallium nitrideCu substrateEnergy densitySapphire substratesInternet-of-Things eraFlexible arrayInternet-of-ThingsEL spectraKrF excimer laser system