Ultra-low-defect homoepitaxial micro-LEDs with enhanced efficiency and monochromaticity for high-PPI AR/MR displays
Liu Y, Wang G, Feng F, Zhanghu M, Yuan Z, Li Z, Xu K, Kwok H, Liu Z. Ultra-low-defect homoepitaxial micro-LEDs with enhanced efficiency and monochromaticity for high-PPI AR/MR displays. PhotoniX 2024, 5: 23. DOI: 10.1186/s43074-024-00137-4.Peer-Reviewed Original ResearchGaN-on-GaNOptoelectronic propertiesEfficiency droop ratioEmission wavelengthMicro-LEDsGaN-on-sapphireCrystal qualityMicro-displaysCm-2High luminanceMicro-display applicationsMicro-LED devicesGaN substratesSapphire substratesDroop ratioEfficiency droopSeries resistanceGallium nitrideEnhanced efficiencyStrong ambient light60‐4: Minimal Efficiency Degradation and Elevated Radiometric Power Density of Ultraviolet‐A Micro‐LED with Homoepitaxial Structure
Liu Y, Wang G, Feng F, Li Z, Liu Z, Xu K, Kwok H, Liu Z. 60‐4: Minimal Efficiency Degradation and Elevated Radiometric Power Density of Ultraviolet‐A Micro‐LED with Homoepitaxial Structure. SID Symposium Digest Of Technical Papers 2024, 55: 828-831. DOI: 10.1002/sdtp.17658.Peer-Reviewed Original ResearchFlexible arrays of GaN-based Micro-LEDs fabricated on different substrates by a laser lift-off process
Yue L, Xu J, Wang X, Zhou J, Wang Y, Yao L, Niu M, Wang M, Cao B, Xu Y, Wang J, Xu K. Flexible arrays of GaN-based Micro-LEDs fabricated on different substrates by a laser lift-off process. Japanese Journal Of Applied Physics 2024, 63: 051007. DOI: 10.35848/1347-4065/ad46af.Peer-Reviewed Original ResearchMicro-LED arrayLaser lift-offMicro-LEDsPolyethylene terephthalateLaser lift-off processHigher laser energy densityLift-off processGaN-based micro-LEDLaser energy densityLaser lift‐off technologyBending radiusFlexible displaysLift-offThreshold voltageCopper foilGallium nitrideCu substrateEnergy densitySapphire substratesInternet-of-Things eraFlexible arrayInternet-of-ThingsEL spectraKrF excimer laser systemP‐11.6: Minimal efficiency degradation and elevated radiometric power density of Ultraviolet‐A micro‐LED with homoepitaxial structure
Liu Y, Wang G, Feng F, Li Z, Liu Z, Xu K, Kwok H, Liu Z. P‐11.6: Minimal efficiency degradation and elevated radiometric power density of Ultraviolet‐A micro‐LED with homoepitaxial structure. SID Symposium Digest Of Technical Papers 2024, 55: 1305-1308. DOI: 10.1002/sdtp.17348.Peer-Reviewed Original ResearchMicro-LEDsLow ideality factorHeat dissipation propertiesHigher power outputIdeality factorPower densityDissipative propertiesGallium nitrideOptoelectronic characteristicsVisible light spectrumPower outputEpitaxial structureCrystal structureMaskless photolithographyOptical stabilityEfficient degradationCentral wavelength