Growth and characterization of micro-LED based on GaN substrate
Wang G, Huang J, Wang Y, Tao T, Zhu X, Wang Z, Li K, Wang Y, Su X, Wang J, Liu B, Cao B, Xu K. Growth and characterization of micro-LED based on GaN substrate. Optics Express 2024, 32: 31463. DOI: 10.1364/oe.529771.Peer-Reviewed Original ResearchExternal quantum efficiencyMicro-LED chipResidual stressDislocation densityMicro-LEDsGaN-based micro-LEDReduced dislocation densityCarrier injectionQuantum efficiencyDislocation phenomenaHigher uniformitySuperior uniformityMicro-LED technologyGaN substratesPit distributionDominant mechanismChipDislocationHigh brightnessUniformityFlexible arrays of GaN-based Micro-LEDs fabricated on different substrates by a laser lift-off process
Yue L, Xu J, Wang X, Zhou J, Wang Y, Yao L, Niu M, Wang M, Cao B, Xu Y, Wang J, Xu K. Flexible arrays of GaN-based Micro-LEDs fabricated on different substrates by a laser lift-off process. Japanese Journal Of Applied Physics 2024, 63: 051007. DOI: 10.35848/1347-4065/ad46af.Peer-Reviewed Original ResearchMicro-LED arrayLaser lift-offMicro-LEDsPolyethylene terephthalateLaser lift-off processHigher laser energy densityLift-off processGaN-based micro-LEDLaser energy densityLaser lift‐off technologyBending radiusFlexible displaysLift-offThreshold voltageCopper foilGallium nitrideCu substrateEnergy densitySapphire substratesInternet-of-Things eraFlexible arrayInternet-of-ThingsEL spectraKrF excimer laser system