Leakage current in GaN-on-GaN vertical GaN SBDs grown by HVPE on native GaN substrates
Jin W, Zhang Y, Xia S, Zhu Q, Sun Y, Yi J, Wang J, Xu K. Leakage current in GaN-on-GaN vertical GaN SBDs grown by HVPE on native GaN substrates. AIP Advances 2024, 14: 095118. DOI: 10.1063/5.0208706.Peer-Reviewed Original ResearchSchottky barrier diodesGaN Schottky barrier diodesVertical GaN-on-GaN Schottky barrier diodesPoole–Frenkel emissionNative GaN substratesVertical GaN Schottky barrier diodesGaN substratesBarrier diodesDefect etchingLeakage currentOptimal fabrication processLeakage mechanismFabricated deviceForeign substratesFabrication processEmissionPassive techniquesThe growth of epitaxial graphene on SiC and its metal intercalation: a review
Yang D, Ma F, Bian X, Xia Q, Xu K, Hu T. The growth of epitaxial graphene on SiC and its metal intercalation: a review. Journal Of Physics Condensed Matter 2024, 36: 173003. PMID: 38237180, DOI: 10.1088/1361-648x/ad201a.Peer-Reviewed Original ResearchEpitaxial grapheneMetal intercalationGrowth of epitaxial grapheneHigh-quality epitaxial grapheneSi-based semiconductor technologyHigh-performance electronic devicesElectronic statesAtomic structureGrapheneSemiconductor technologyElectronic devicesSiCFabrication processStructural evolutionGrowth mechanismIntercalation effectSiC.Modified EGMetalIntercalation