Improved surface morphology and reduced V-pits density of lattice-matched AlInN films grown by atmospheric pressure metalorganic chemical vapor deposition
Fan S, Ikeda M, Zhang B, Li Z, Su X, Liu Z, Xu K. Improved surface morphology and reduced V-pits density of lattice-matched AlInN films grown by atmospheric pressure metalorganic chemical vapor deposition. Journal Of Alloys And Compounds 2024, 1007: 176406. DOI: 10.1016/j.jallcom.2024.176406.Peer-Reviewed Original ResearchMetalorganic chemical vapor depositionChemical vapor depositionSurface morphologyVapor depositionPressure metalorganic chemical vapor depositionSevere parasitic reactionsAtmospheric pressure metalorganic chemical vapor depositionAtmospheric-pressure metalorganic chemical vapor depositionIn-plane uniformityLow surface roughnessV-pit densityExcellent surface morphologyAtomic force microscopyGaN/AlInN interfacesParasitic reactionsSurface roughnessGrowth temperatureSecond-order reaction modelReduced roughnessFilm thicknessAlInN filmsForce microscopyRoughness valuesCrystalline qualityElectronic devicesThe growth of epitaxial graphene on SiC and its metal intercalation: a review
Yang D, Ma F, Bian X, Xia Q, Xu K, Hu T. The growth of epitaxial graphene on SiC and its metal intercalation: a review. Journal Of Physics Condensed Matter 2024, 36: 173003. PMID: 38237180, DOI: 10.1088/1361-648x/ad201a.Peer-Reviewed Original ResearchEpitaxial grapheneMetal intercalationGrowth of epitaxial grapheneHigh-quality epitaxial grapheneSi-based semiconductor technologyHigh-performance electronic devicesElectronic statesAtomic structureGrapheneSemiconductor technologyElectronic devicesSiCFabrication processStructural evolutionGrowth mechanismIntercalation effectSiC.Modified EGMetalIntercalation