GaN-Based Freestanding Micro-LEDs With GHz Bandwidth and Low Efficiency Droop for Visible Light Communication
Huang J, Wang G, Xu H, Xu F, Zhi T, Chen W, Sang Y, Zhang D, Yu J, He H, Xu K, Tian P, Tao T, Liu B, Zhang R. GaN-Based Freestanding Micro-LEDs With GHz Bandwidth and Low Efficiency Droop for Visible Light Communication. IEEE Transactions On Electron Devices 2024, 71: 6826-6830. DOI: 10.1109/ted.2024.3456770.Peer-Reviewed Original ResearchVisible light communicationExternal quantum efficiencyModulation bandwidthQuantum-confined Stark effectQuantum barriersLight communicationMicro-LEDsEfficiency droopFree-space visible light communicationMicro-light-emitting diodesM-diameterM-diameter deviceImproved carrier transportLow efficiency droopData rateFree-spaceGHz bandwidthLight-emitting diodesOptical powerDefect densityCarrier transportBandwidthEnergy-efficient methodCarrier localizationStark effectUltra-low-defect homoepitaxial micro-LEDs with enhanced efficiency and monochromaticity for high-PPI AR/MR displays
Liu Y, Wang G, Feng F, Zhanghu M, Yuan Z, Li Z, Xu K, Kwok H, Liu Z. Ultra-low-defect homoepitaxial micro-LEDs with enhanced efficiency and monochromaticity for high-PPI AR/MR displays. PhotoniX 2024, 5: 23. DOI: 10.1186/s43074-024-00137-4.Peer-Reviewed Original ResearchGaN-on-GaNOptoelectronic propertiesEfficiency droop ratioEmission wavelengthMicro-LEDsGaN-on-sapphireCrystal qualityMicro-displaysCm-2High luminanceMicro-display applicationsMicro-LED devicesGaN substratesSapphire substratesDroop ratioEfficiency droopSeries resistanceGallium nitrideEnhanced efficiencyStrong ambient lightLow Dislocation Density Homoepitaxy Ultraviolet-A Micro-LEDs Scale Down to 3 μm
Liu Y, Wang G, Feng F, Li Z, Xu K, Kwok H, Liu Z. Low Dislocation Density Homoepitaxy Ultraviolet-A Micro-LEDs Scale Down to 3 μm. IEEE Electron Device Letters 2024, 45: 641-644. DOI: 10.1109/led.2024.3368513.Peer-Reviewed Original ResearchDislocation densityIn-plane compressive stressHigh dislocation densitySeries resistanceCompressive stressIdeality factorStable emission wavelengthEnhanced crystal qualityEfficiency droopOptoelectronic performanceDevice levelMaterial levelSize effectCrystal qualityHeteroepitaxial substratesUniform emissionLattice mismatchMicro-LEDsHigh stressEmission wavelengthMinimum valueDevicesCm-2DroopSubstrate