Dislocation evolution in anisotropic deformation of GaN under nanoindentation
Chen K, Xue M, Chen R, Dong X, Gao X, Wang J, Han S, Song W, Xu K. Dislocation evolution in anisotropic deformation of GaN under nanoindentation. Applied Physics Letters 2024, 125: 142101. DOI: 10.1063/5.0230366.Peer-Reviewed Original ResearchDislocation evolutionShear stressInduced subsurface damageEnergy storage systemSlip system activityDislocation loopsPeierls-Nabarro stressCritical shear stressAbrasive particlesDislocation nucleationDislocation dynamicsPop-inSubsurface damageMulti-functional devicesCompressive stressDevice performanceMolecular dynamicsTransmission electron microscopyWireless communicationDefect evaluationStorage systemSingle crystalsGaN single crystalsRaman spectroscopyGaN wafersNano-indentation study of dislocation evolution in GaN-based laser diodes
Chen J, Su X, Wang G, Niu M, Li X, Xu K. Nano-indentation study of dislocation evolution in GaN-based laser diodes. Discover Nano 2024, 19: 40. PMID: 38453741, PMCID: PMC10920521, DOI: 10.1186/s11671-024-03983-0.Peer-Reviewed Original ResearchSlip systemsBasal slip systemNano-indentation studiesBehavior of dislocationsNano-indentation techniquePyramidal slip planesDensity of dislocationsP-GaN layerDislocation evolutionGaN-based laser diodesMismatch stressBurgers vectorGaN-based LDSlip planesLaser diodeMulti-LayerMotion behaviorStrained layersDislocationLayer