2024
Optical characterization of GaN:Eu microcrystals grown by the ammonothermal method
Xie K, Li T, Ren G, Wang L, Lu W, Shen L, Zhou H, Xu K. Optical characterization of GaN:Eu microcrystals grown by the ammonothermal method. Journal Of Alloys And Compounds 2024, 1008: 176776. DOI: 10.1016/j.jallcom.2024.176776.Peer-Reviewed Original ResearchGlow discharge mass spectrometryTime-resolved photoluminescenceLuminescent sitesPhotoluminescence excitationScanning electron microscopyEu3+ ionsExposed crystal facesEnergy transfer processAmmonothermal methodCharacteristic luminescenceLuminescence propertiesWurtzite crystal structureO2- ionsCrystal structureExcitation wavelengthMass spectrometryCrystal facesLuminescenceEu concentrationMicrocrystalsLuminescence peakPhotoluminescenceTransfer processOptical characterizationEu060‐4: Minimal Efficiency Degradation and Elevated Radiometric Power Density of Ultraviolet‐A Micro‐LED with Homoepitaxial Structure
Liu Y, Wang G, Feng F, Li Z, Liu Z, Xu K, Kwok H, Liu Z. 60‐4: Minimal Efficiency Degradation and Elevated Radiometric Power Density of Ultraviolet‐A Micro‐LED with Homoepitaxial Structure. SID Symposium Digest Of Technical Papers 2024, 55: 828-831. DOI: 10.1002/sdtp.17658.Peer-Reviewed Original ResearchP‐11.6: Minimal efficiency degradation and elevated radiometric power density of Ultraviolet‐A micro‐LED with homoepitaxial structure
Liu Y, Wang G, Feng F, Li Z, Liu Z, Xu K, Kwok H, Liu Z. P‐11.6: Minimal efficiency degradation and elevated radiometric power density of Ultraviolet‐A micro‐LED with homoepitaxial structure. SID Symposium Digest Of Technical Papers 2024, 55: 1305-1308. DOI: 10.1002/sdtp.17348.Peer-Reviewed Original ResearchMicro-LEDsLow ideality factorHeat dissipation propertiesHigher power outputIdeality factorPower densityDissipative propertiesGallium nitrideOptoelectronic characteristicsVisible light spectrumPower outputEpitaxial structureCrystal structureMaskless photolithographyOptical stabilityEfficient degradationCentral wavelength
2023
Structure and Cathodoluminescence Properties in Tb3+ and Eu3+ Doped AlN Films
Luo X, Wang X, Meng H, Chen H, Zeng X, Gao X, Mao H, Xu K. Structure and Cathodoluminescence Properties in Tb3+ and Eu3+ Doped AlN Films. Physica Status Solidi (a) – Applications And Materials Science 2023, 221 DOI: 10.1002/pssa.202300625.Peer-Reviewed Original ResearchAlN filmsTb 3Non-radiative resonant energy transferEu 3Cathodoluminescence propertiesX-ray diffractionResonant energy transferEnergy transfer mechanismInternal compressive stressIon implantationChromaticity coordinatesRaman scatteringColor temperatureEnergy transferFilmsTransfer mechanismScatteringCrystal structureTb3Dose ratioFirst timeCompressive stressDiffractionAlN hostProperties