Interband transition physics from the absorption edge in GaN: New prospects from numerical analysis
Han S, Yi J, Song W, Chen K, Zheng S, Zhang Y, Xu K. Interband transition physics from the absorption edge in GaN: New prospects from numerical analysis. AIP Advances 2023, 13: 125016. DOI: 10.1063/5.0180220.Peer-Reviewed Original ResearchAbsorption/emissionElectric fieldOptical logic devicesTunable electric fieldStrong polarization effectsAbundant surface statesQuantum statesTransition physicsAbsorption edgeSurface statesBand structureEmission edgeExperimental absorptionReasonable bandgapBrillouin approximationWentzel-KramersPolarization effectsGaN samplesField strengthLogic devicesNumerical simulationsNonuniform fieldEmissionNon-uniform fieldField