Ultra-low-defect homoepitaxial micro-LEDs with enhanced efficiency and monochromaticity for high-PPI AR/MR displays
Liu Y, Wang G, Feng F, Zhanghu M, Yuan Z, Li Z, Xu K, Kwok H, Liu Z. Ultra-low-defect homoepitaxial micro-LEDs with enhanced efficiency and monochromaticity for high-PPI AR/MR displays. PhotoniX 2024, 5: 23. DOI: 10.1186/s43074-024-00137-4.Peer-Reviewed Original ResearchGaN-on-GaNOptoelectronic propertiesEfficiency droop ratioEmission wavelengthMicro-LEDsGaN-on-sapphireCrystal qualityMicro-displaysCm-2High luminanceMicro-display applicationsMicro-LED devicesGaN substratesSapphire substratesDroop ratioEfficiency droopSeries resistanceGallium nitrideEnhanced efficiencyStrong ambient light10.5 Gbps Visible Light Communication Systems Based on C-Plane Freestanding GaN Micro-LED
Rao Z, Shan X, Wang G, Jin Z, Lin R, Cui X, Liu R, Xu K, Tian P. 10.5 Gbps Visible Light Communication Systems Based on C-Plane Freestanding GaN Micro-LED. Journal Of Lightwave Technology 2024, 42: 4360-4364. DOI: 10.1109/jlt.2024.3363729.Peer-Reviewed Original ResearchData rateGaN micro-LEDMicro-LEDsVisible light communication systemHigh data rateMaximum data rateRecord data rateOFDM signal bandwidthC-planeSignal bandwidthModulation bandwidthCommunication performanceCommunication systemsHigh bandwidthGbpsOptimum sizeSize effectBandwidthOptoelectronic propertiesOFDM