Growth and characterization of micro-LED based on GaN substrate
Wang G, Huang J, Wang Y, Tao T, Zhu X, Wang Z, Li K, Wang Y, Su X, Wang J, Liu B, Cao B, Xu K. Growth and characterization of micro-LED based on GaN substrate. Optics Express 2024, 32: 31463. DOI: 10.1364/oe.529771.Peer-Reviewed Original ResearchExternal quantum efficiencyMicro-LED chipResidual stressDislocation densityMicro-LEDsGaN-based micro-LEDReduced dislocation densityCarrier injectionQuantum efficiencyDislocation phenomenaHigher uniformitySuperior uniformityMicro-LED technologyGaN substratesPit distributionDominant mechanismChipDislocationHigh brightnessUniformityComparative analysis of microstructure, electrical and optical performance in sidewall etching process for GaN-based green micro-LED
Li X, Su X, Wang G, Chen J, Wang L, Song W, Xu K. Comparative analysis of microstructure, electrical and optical performance in sidewall etching process for GaN-based green micro-LED. Journal Of Physics D 2024, 57: 375108. DOI: 10.1088/1361-6463/ad55f9.Peer-Reviewed Original ResearchKelvin probe force microscopeGeometric phase analysisTransmission electron microscopyExternal quantum efficiencyTime-resolved photoluminescenceInductively coupled plasmaOptical performanceSidewall defectsEvolution of microstructureInductively coupled plasma etchingTetramethylammonium hydroxide treatmentBuild-in electric fieldMicro-LEDsNon-radiative recombination lossesGreen micro-LEDsSemi-polar surfacesSurface lattice relaxationSurface dangling bondsTetramethylammonium hydroxideNon-radiative recombination mechanismsNon-radiative recombination rateChip sizeTetramethylammonium hydroxide solutionForce microscopeEtching process