Leakage current in GaN-on-GaN vertical GaN SBDs grown by HVPE on native GaN substrates
Jin W, Zhang Y, Xia S, Zhu Q, Sun Y, Yi J, Wang J, Xu K. Leakage current in GaN-on-GaN vertical GaN SBDs grown by HVPE on native GaN substrates. AIP Advances 2024, 14: 095118. DOI: 10.1063/5.0208706.Peer-Reviewed Original ResearchSchottky barrier diodesGaN Schottky barrier diodesVertical GaN-on-GaN Schottky barrier diodesPoole–Frenkel emissionNative GaN substratesVertical GaN Schottky barrier diodesGaN substratesBarrier diodesDefect etchingLeakage currentOptimal fabrication processLeakage mechanismFabricated deviceForeign substratesFabrication processEmissionPassive techniques