Epitaxial Growth of High-Quality GaN Films Based on Bilayer Graphene
Zhou J, Xu Y, Wang X, Wang Y, Yue L, Wang J, Cao B, Xu K. Epitaxial Growth of High-Quality GaN Films Based on Bilayer Graphene. 2023, 00: 161-164. DOI: 10.1109/sslchinaifws60785.2023.10399753.Peer-Reviewed Original ResearchGaN filmsAlN/sapphire templatesEpitaxial GaN thin filmsGrowth of GaN filmsGrowth of high-quality GaN filmsGaN thin filmsHigh-quality GaN filmsEpitaxial growthOptoelectronic devicesHigh-performance devicesNucleation layerGrapheneAlN/sapphireFlexible optoelectronic devicesThin filmsFilm formation processGaNFilm stressDislocation densitySurface roughnessFilmsFormation processEpitaxyGrowth conditionsBilayer