2024
High-power AlGaN deep-ultraviolet micro-light-emitting diode displays for maskless photolithography
Feng F, Liu Y, Zhang K, Yang H, Hyun B, Xu K, Kwok H, Liu Z. High-power AlGaN deep-ultraviolet micro-light-emitting diode displays for maskless photolithography. Nature Photonics 2024, 1-8. DOI: 10.1038/s41566-024-01551-7.Peer-Reviewed Original ResearchMicro-light-emitting diodesMicro-LED displayMicro-LEDsMaskless photolithographySuperior light extraction efficiencyPeak external quantum efficiencyLight extraction efficiencyMicro-LED arrayExternal quantum efficiencyElectrical characterizationCircuit driverDeep ultravioletPhotoresist filmSpreading uniformityQuantum efficiencyEmission uniformityPhotolithographySemiconductor industryHeat dispersionMicro-displaysMaximum brightnessReflective layerPhotolithography applicationsOptimal performanceDiodesGrowth and characterization of micro-LED based on GaN substrate
Wang G, Huang J, Wang Y, Tao T, Zhu X, Wang Z, Li K, Wang Y, Su X, Wang J, Liu B, Cao B, Xu K. Growth and characterization of micro-LED based on GaN substrate. Optics Express 2024, 32: 31463. DOI: 10.1364/oe.529771.Peer-Reviewed Original ResearchExternal quantum efficiencyMicro-LED chipResidual stressDislocation densityMicro-LEDsGaN-based micro-LEDReduced dislocation densityCarrier injectionQuantum efficiencyDislocation phenomenaHigher uniformitySuperior uniformityMicro-LED technologyGaN substratesPit distributionDominant mechanismChipDislocationHigh brightnessUniformityComparative analysis of microstructure, electrical and optical performance in sidewall etching process for GaN-based green micro-LED
Li X, Su X, Wang G, Chen J, Wang L, Song W, Xu K. Comparative analysis of microstructure, electrical and optical performance in sidewall etching process for GaN-based green micro-LED. Journal Of Physics D 2024, 57: 375108. DOI: 10.1088/1361-6463/ad55f9.Peer-Reviewed Original ResearchKelvin probe force microscopeGeometric phase analysisTransmission electron microscopyExternal quantum efficiencyTime-resolved photoluminescenceInductively coupled plasmaOptical performanceSidewall defectsEvolution of microstructureInductively coupled plasma etchingTetramethylammonium hydroxide treatmentBuild-in electric fieldMicro-LEDsNon-radiative recombination lossesGreen micro-LEDsSemi-polar surfacesSurface lattice relaxationSurface dangling bondsTetramethylammonium hydroxideNon-radiative recombination mechanismsNon-radiative recombination rateChip sizeTetramethylammonium hydroxide solutionForce microscopeEtching process
2023
Broadband ultraviolet plasmonic enhanced AlGaN/GaN heterojunction photodetectors with close-packed Al nanoparticle arrays
Xu L, Ge X, Huang Z, Liu T, Wang R, Gao H, Zhou Y, Wang M, Wang J, Xu K. Broadband ultraviolet plasmonic enhanced AlGaN/GaN heterojunction photodetectors with close-packed Al nanoparticle arrays. Physical Chemistry Chemical Physics 2023, 25: 22794-22803. PMID: 37584078, DOI: 10.1039/d3cp02060f.Peer-Reviewed Original ResearchAl NP arraysNP arraysPhotoresponse enhancementHeterojunction photodetectorAl nanoparticle arraysTemplate transfer methodEfficient light scatteringExternal quantum efficiencyPlasmonic metal nanostructuresAl nanoparticlesNanoparticle arraysConcentrate optical fieldsMaximum external quantum efficiencyResonance wavelengthAlGaN surfaceFast photoresponseMetal nanostructuresField enhancementExcellent enhancementNanoscale volumesSemiconductor photodetectorsPhotodetectorsQuantum efficiencyField absorptionOptical field