Ultra-low-defect homoepitaxial micro-LEDs with enhanced efficiency and monochromaticity for high-PPI AR/MR displays
Liu Y, Wang G, Feng F, Zhanghu M, Yuan Z, Li Z, Xu K, Kwok H, Liu Z. Ultra-low-defect homoepitaxial micro-LEDs with enhanced efficiency and monochromaticity for high-PPI AR/MR displays. PhotoniX 2024, 5: 23. DOI: 10.1186/s43074-024-00137-4.Peer-Reviewed Original ResearchGaN-on-GaNOptoelectronic propertiesEfficiency droop ratioEmission wavelengthMicro-LEDsGaN-on-sapphireCrystal qualityMicro-displaysCm-2High luminanceMicro-display applicationsMicro-LED devicesGaN substratesSapphire substratesDroop ratioEfficiency droopSeries resistanceGallium nitrideEnhanced efficiencyStrong ambient lightStep-edge-guided nucleation and growth mode transition of α-Ga2O3 heteroepitaxy on vicinal sapphire
Hao J, Zhang Y, Zhang Y, Xu K, Han G, Ye J. Step-edge-guided nucleation and growth mode transition of α-Ga2O3 heteroepitaxy on vicinal sapphire. Chinese Physics B 2024, 33: 086104. DOI: 10.1088/1674-1056/ad4ff6.Peer-Reviewed Original ResearchGrowth mode transitionGrowth modeDislocation densityTerrace widthCm-2Epitaxial growth modeIncreased dislocation densityNeighboring nucleiFlat sapphire surfaceTwo-dimensional (2DSurface morphology degradationSubstrate terracesVicinal sapphireMaterial propertiesSurface roughnessTerrace edgesDevice performanceMiscut angleCoherent growthSapphire substratesSemiconductor layerEdge dislocationsHeteroepitaxial layersMode transitionNucleation distanceLow Dislocation Density Homoepitaxy Ultraviolet-A Micro-LEDs Scale Down to 3 μm
Liu Y, Wang G, Feng F, Li Z, Xu K, Kwok H, Liu Z. Low Dislocation Density Homoepitaxy Ultraviolet-A Micro-LEDs Scale Down to 3 μm. IEEE Electron Device Letters 2024, 45: 641-644. DOI: 10.1109/led.2024.3368513.Peer-Reviewed Original ResearchDislocation densityIn-plane compressive stressHigh dislocation densitySeries resistanceCompressive stressIdeality factorStable emission wavelengthEnhanced crystal qualityEfficiency droopOptoelectronic performanceDevice levelMaterial levelSize effectCrystal qualityHeteroepitaxial substratesUniform emissionLattice mismatchMicro-LEDsHigh stressEmission wavelengthMinimum valueDevicesCm-2DroopSubstrate