Leakage current in GaN-on-GaN vertical GaN SBDs grown by HVPE on native GaN substrates
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Wang G, Huang J, Wang Y, Tao T, Zhu X, Wang Z, Li K, Wang Y, Su X, Wang J, Liu B, Cao B, Xu K. Growth and characterization of micro-LED based on GaN substrate. Optics Express 2024, 32: 31463-31472. PMID: 39573280, DOI: 10.1364/oe.529771.Peer-Reviewed Original ResearchExternal quantum efficiencyMicro-LED chipResidual stressDislocation densityMicro-LEDsGaN-based micro-LEDReduced dislocation densityCarrier injectionQuantum efficiencyDislocation phenomenaHigher uniformitySuperior uniformityMicro-LED technologyGaN substratesPit distributionDominant mechanismChipDislocationHigh brightnessUniformityUltra-low-defect homoepitaxial micro-LEDs with enhanced efficiency and monochromaticity for high-PPI AR/MR displays
Liu Y, Wang G, Feng F, Zhanghu M, Yuan Z, Li Z, Xu K, Kwok H, Liu Z. Ultra-low-defect homoepitaxial micro-LEDs with enhanced efficiency and monochromaticity for high-PPI AR/MR displays. PhotoniX 2024, 5: 23. DOI: 10.1186/s43074-024-00137-4.Peer-Reviewed Original ResearchGaN-on-GaNOptoelectronic propertiesEfficiency droop ratioEmission wavelengthMicro-LEDsGaN-on-sapphireCrystal qualityMicro-displaysCm-2High luminanceMicro-display applicationsMicro-LED devicesGaN substratesSapphire substratesDroop ratioEfficiency droopSeries resistanceGallium nitrideEnhanced efficiencyStrong ambient light