Structure and Cathodoluminescence Properties in Tb3+ and Eu3+ Doped AlN Films
Luo X, Wang X, Meng H, Chen H, Zeng X, Gao X, Mao H, Xu K. Structure and Cathodoluminescence Properties in Tb3+ and Eu3+ Doped AlN Films. Physica Status Solidi (a) – Applications And Materials Science 2023, 221 DOI: 10.1002/pssa.202300625.Peer-Reviewed Original ResearchAlN filmsTb 3Non-radiative resonant energy transferEu 3Cathodoluminescence propertiesX-ray diffractionResonant energy transferEnergy transfer mechanismInternal compressive stressIon implantationChromaticity coordinatesRaman scatteringColor temperatureEnergy transferFilmsTransfer mechanismScatteringCrystal structureTb3Dose ratioFirst timeCompressive stressDiffractionAlN hostPropertiesGrowth of Single-Crystalline GaN Films on Ga-Free Langasite-Type Crystals by Metal–Organic Chemical Vapor Deposition
Wang S, Xu J, Wang Y, Su X, Zheng Y, Bao N, Xu K. Growth of Single-Crystalline GaN Films on Ga-Free Langasite-Type Crystals by Metal–Organic Chemical Vapor Deposition. Crystal Growth & Design 2023, 24: 331-338. DOI: 10.1021/acs.cgd.3c01042.Peer-Reviewed Original ResearchMetal-organic chemical vapor depositionGaN filmsChemical vapor depositionSurface acoustic wave devicesVapor depositionSingle crystalline GaN filmsAcoustic wave devicesLGS substrateHigh frequency rangeSAW devicesPiezoelectric propertiesWave devicesGood optical propertiesFilm qualityCompressive stressGaN materialEpitaxial growthGa dropletsMetal nitridesEpitaxial relationshipFilmsGas elementsHigh temperatureLGS crystalMixed dislocationsEpitaxial Growth of High-Quality GaN Films Based on Bilayer Graphene
Zhou J, Xu Y, Wang X, Wang Y, Yue L, Wang J, Cao B, Xu K. Epitaxial Growth of High-Quality GaN Films Based on Bilayer Graphene. 2023, 00: 161-164. DOI: 10.1109/sslchinaifws60785.2023.10399753.Peer-Reviewed Original ResearchGaN filmsAlN/sapphire templatesEpitaxial GaN thin filmsGrowth of GaN filmsGrowth of high-quality GaN filmsGaN thin filmsHigh-quality GaN filmsEpitaxial growthOptoelectronic devicesHigh-performance devicesNucleation layerGrapheneAlN/sapphireFlexible optoelectronic devicesThin filmsFilm formation processGaNFilm stressDislocation densitySurface roughnessFilmsFormation processEpitaxyGrowth conditionsBilayerDefect evolution in GaN thin film heterogeneously integrated with CMOS-compatible Si(100) substrate by ion-cutting technology
Shi H, Yi A, Ding J, Liu X, Qin Q, Yi J, Hu J, Wang M, Cai D, Wang J, Xu K, Mu F, Suga T, Heller R, Wang M, Zhou S, Xu W, Huang K, You T, Ou X. Defect evolution in GaN thin film heterogeneously integrated with CMOS-compatible Si(100) substrate by ion-cutting technology. Science China Information Sciences 2023, 66: 219403. DOI: 10.1007/s11432-022-3668-0.Peer-Reviewed Original Research