2024
Growth and characterization of micro-LED based on GaN substrate.
Wang G, Huang J, Wang Y, Tao T, Zhu X, Wang Z, Li K, Wang Y, Su X, Wang J, Liu B, Cao B, Xu K. Growth and characterization of micro-LED based on GaN substrate. Optics Express 2024, 32: 31463-31472. PMID: 39573280, DOI: 10.1364/oe.529771.Peer-Reviewed Original ResearchExternal quantum efficiencyMicro-LED chipResidual stressDislocation densityMicro-LEDsGaN-based micro-LEDReduced dislocation densityCarrier injectionQuantum efficiencyDislocation phenomenaHigher uniformitySuperior uniformityMicro-LED technologyGaN substratesPit distributionDominant mechanismChipDislocationHigh brightnessUniformity
2023
Optimized design of single trench termination combined with P-type buried layers for power MOSFETs
Wang X, Zhou J, Zhang Y, Wang J, Xu K. Optimized design of single trench termination combined with P-type buried layers for power MOSFETs. 2023, 00: 165-168. DOI: 10.1109/sslchinaifws60785.2023.10399693.Peer-Reviewed Original Research