Nanoindentation mechanical studies of bulk AlN single crystals with different orientations
Zhou H, Chen K, Gao X, Zheng S, Zeng X, Wang C, Wang Y, Pan Y, Xu K. Nanoindentation mechanical studies of bulk AlN single crystals with different orientations. Semiconductor Science And Technology 2024, 40: 015008. DOI: 10.1088/1361-6641/ad98b8.Peer-Reviewed Original ResearchIndentation depthYoung's modulusPhysical vapor transportIncreasing indentation depthIndentation size effectNano-mechanical testingLuminescence quenchingSmall Young's modulusCrystal planesSingle crystalsCrystal substratesRaman spectroscopyMechanical propertiesPanchromatic CL imagesLocal stressAlN single crystalsSurface morphologyMechanism studyAluminum nitrideProperties of AlNSlip regionCrystalIndentationStructural defectsModulusImproved surface morphology and reduced V-pits density of lattice-matched AlInN films grown by atmospheric pressure metalorganic chemical vapor deposition
Fan S, Ikeda M, Zhang B, Li Z, Su X, Liu Z, Xu K. Improved surface morphology and reduced V-pits density of lattice-matched AlInN films grown by atmospheric pressure metalorganic chemical vapor deposition. Journal Of Alloys And Compounds 2024, 1007: 176406. DOI: 10.1016/j.jallcom.2024.176406.Peer-Reviewed Original ResearchMetalorganic chemical vapor depositionChemical vapor depositionSurface morphologyVapor depositionPressure metalorganic chemical vapor depositionSevere parasitic reactionsAtmospheric pressure metalorganic chemical vapor depositionAtmospheric-pressure metalorganic chemical vapor depositionIn-plane uniformityLow surface roughnessV-pit densityExcellent surface morphologyAtomic force microscopyGaN/AlInN interfacesParasitic reactionsSurface roughnessGrowth temperatureSecond-order reaction modelReduced roughnessFilm thicknessAlInN filmsForce microscopyRoughness valuesCrystalline qualityElectronic devices