Nucleation study of AlN crystal growth on 6H-SiC substrates using the MOCVD
Lu Z, Wang Y, Wang L, Xu Y, Liu Y, Xu K. Nucleation study of AlN crystal growth on 6H-SiC substrates using the MOCVD. Applied Physics Letters 2024, 125: 242101. DOI: 10.1063/5.0238459.Peer-Reviewed Original ResearchFormation energyNucleation morphologyAlN crystal growthCrystal growthMolecular dynamics simulationsMetal organic chemical vapor deposition technologyFilm growth processIsland growth modeAlN thin filmsChemical vapor deposition technologyN atomsThin film growth processAdsorption capacityVapor deposition technologyStronger adsorption capacityAtomic structureAdsorption energyAl atomsDynamics simulationsThin filmsGrowth modeHexagonal AlNDeposition technologyAlNStacking faultsStep-edge-guided nucleation and growth mode transition of α-Ga2O3 heteroepitaxy on vicinal sapphire
Hao J, Zhang Y, Zhang Y, Xu K, Han G, Ye J. Step-edge-guided nucleation and growth mode transition of α-Ga2O3 heteroepitaxy on vicinal sapphire. Chinese Physics B 2024, 33: 086104. DOI: 10.1088/1674-1056/ad4ff6.Peer-Reviewed Original ResearchGrowth mode transitionGrowth modeDislocation densityTerrace widthCm-2Epitaxial growth modeIncreased dislocation densityNeighboring nucleiFlat sapphire surfaceTwo-dimensional (2DSurface morphology degradationSubstrate terracesVicinal sapphireMaterial propertiesSurface roughnessTerrace edgesDevice performanceMiscut angleCoherent growthSapphire substratesSemiconductor layerEdge dislocationsHeteroepitaxial layersMode transitionNucleation distance