2025
Effect of AlN interlayer thickness on thermal conductances of GaN epilayer and GaN/SiC interface in GaN-on-SiC heterostructures
Wang L, Zhang Z, Su X, Zhou J, Chen J, Li Z, Chang G, Xia S, Yin T, Niu M, Zhu J, Tang D, Xu K. Effect of AlN interlayer thickness on thermal conductances of GaN epilayer and GaN/SiC interface in GaN-on-SiC heterostructures. Applied Surface Science 2025, 686: 162106. DOI: 10.1016/j.apsusc.2024.162106.Peer-Reviewed Original ResearchHigh electron mobility transistorsAlN interlayer thicknessGaN-on-SiCGaN epilayersAlN interlayerPhonon density of statesHeteroepitaxial growth of GaNDensity of statesAtomically smooth interfaceThermal conductivityElectron mobility transistorsTime-domain thermoreflectanceMultilayer structureEnhancement of G′Growth of GaNInterfacial thermal conductanceInterlayer thicknessMetal organic chemical vapor depositionSiC substrateMobility transistorsAlN bufferGrow GaNChemical vapor depositionIsland shapeGaN
2024
Improved surface morphology and reduced V-pits density of lattice-matched AlInN films grown by atmospheric pressure metalorganic chemical vapor deposition
Fan S, Ikeda M, Zhang B, Li Z, Su X, Liu Z, Xu K. Improved surface morphology and reduced V-pits density of lattice-matched AlInN films grown by atmospheric pressure metalorganic chemical vapor deposition. Journal Of Alloys And Compounds 2024, 1007: 176406. DOI: 10.1016/j.jallcom.2024.176406.Peer-Reviewed Original ResearchMetalorganic chemical vapor depositionChemical vapor depositionSurface morphologyVapor depositionPressure metalorganic chemical vapor depositionSevere parasitic reactionsAtmospheric pressure metalorganic chemical vapor depositionAtmospheric-pressure metalorganic chemical vapor depositionIn-plane uniformityLow surface roughnessV-pit densityExcellent surface morphologyAtomic force microscopyGaN/AlInN interfacesParasitic reactionsSurface roughnessGrowth temperatureSecond-order reaction modelReduced roughnessFilm thicknessAlInN filmsForce microscopyRoughness valuesCrystalline qualityElectronic devices
2023
Growth of Single-Crystalline GaN Films on Ga-Free Langasite-Type Crystals by Metal–Organic Chemical Vapor Deposition
Wang S, Xu J, Wang Y, Su X, Zheng Y, Bao N, Xu K. Growth of Single-Crystalline GaN Films on Ga-Free Langasite-Type Crystals by Metal–Organic Chemical Vapor Deposition. Crystal Growth & Design 2023, 24: 331-338. DOI: 10.1021/acs.cgd.3c01042.Peer-Reviewed Original ResearchMetal-organic chemical vapor depositionGaN filmsChemical vapor depositionSurface acoustic wave devicesVapor depositionSingle crystalline GaN filmsAcoustic wave devicesLGS substrateHigh frequency rangeSAW devicesPiezoelectric propertiesWave devicesGood optical propertiesFilm qualityCompressive stressGaN materialEpitaxial growthGa dropletsMetal nitridesEpitaxial relationshipFilmsGas elementsHigh temperatureLGS crystalMixed dislocations