Nucleation study of AlN crystal growth on 6H-SiC substrates using the MOCVD
Lu Z, Wang Y, Wang L, Xu Y, Liu Y, Xu K. Nucleation study of AlN crystal growth on 6H-SiC substrates using the MOCVD. Applied Physics Letters 2024, 125: 242101. DOI: 10.1063/5.0238459.Peer-Reviewed Original ResearchFormation energyNucleation morphologyAlN crystal growthCrystal growthMolecular dynamics simulationsMetal organic chemical vapor deposition technologyFilm growth processIsland growth modeAlN thin filmsChemical vapor deposition technologyN atomsThin film growth processAdsorption capacityVapor deposition technologyStronger adsorption capacityAtomic structureAdsorption energyAl atomsDynamics simulationsThin filmsGrowth modeHexagonal AlNDeposition technologyAlNStacking faultsThe growth of epitaxial graphene on SiC and its metal intercalation: a review
Yang D, Ma F, Bian X, Xia Q, Xu K, Hu T. The growth of epitaxial graphene on SiC and its metal intercalation: a review. Journal Of Physics Condensed Matter 2024, 36: 173003. PMID: 38237180, DOI: 10.1088/1361-648x/ad201a.Peer-Reviewed Original ResearchEpitaxial grapheneMetal intercalationGrowth of epitaxial grapheneHigh-quality epitaxial grapheneSi-based semiconductor technologyHigh-performance electronic devicesElectronic statesAtomic structureGrapheneSemiconductor technologyElectronic devicesSiCFabrication processStructural evolutionGrowth mechanismIntercalation effectSiC.Modified EGMetalIntercalation