Nano-indentation study of dislocation evolution in GaN-based laser diodes
Chen J, Su X, Wang G, Niu M, Li X, Xu K. Nano-indentation study of dislocation evolution in GaN-based laser diodes. Discover Nano 2024, 19: 40. PMID: 38453741, PMCID: PMC10920521, DOI: 10.1186/s11671-024-03983-0.Peer-Reviewed Original ResearchSlip systemsBasal slip systemNano-indentation studiesBehavior of dislocationsNano-indentation techniquePyramidal slip planesDensity of dislocationsP-GaN layerDislocation evolutionGaN-based laser diodesMismatch stressBurgers vectorGaN-based LDSlip planesLaser diodeMulti-LayerMotion behaviorStrained layersDislocationLayerDislocation slip systems in c-plane and m-plane AlN single crystals under nano-indentation
Chen J, Chen K, Su X, Niu M, Wang Q, Xu K. Dislocation slip systems in c-plane and m-plane AlN single crystals under nano-indentation. Thin Solid Films 2024, 791: 140240. DOI: 10.1016/j.tsf.2024.140240.Peer-Reviewed Original Research