60‐4: Minimal Efficiency Degradation and Elevated Radiometric Power Density of Ultraviolet‐A Micro‐LED with Homoepitaxial Structure
Liu Y, Wang G, Feng F, Li Z, Liu Z, Xu K, Kwok H, Liu Z. 60‐4: Minimal Efficiency Degradation and Elevated Radiometric Power Density of Ultraviolet‐A Micro‐LED with Homoepitaxial Structure. SID Symposium Digest Of Technical Papers 2024, 55: 828-831. DOI: 10.1002/sdtp.17658.Peer-Reviewed Original ResearchP‐11.6: Minimal efficiency degradation and elevated radiometric power density of Ultraviolet‐A micro‐LED with homoepitaxial structure
Liu Y, Wang G, Feng F, Li Z, Liu Z, Xu K, Kwok H, Liu Z. P‐11.6: Minimal efficiency degradation and elevated radiometric power density of Ultraviolet‐A micro‐LED with homoepitaxial structure. SID Symposium Digest Of Technical Papers 2024, 55: 1305-1308. DOI: 10.1002/sdtp.17348.Peer-Reviewed Original ResearchMicro-LEDsLow ideality factorHeat dissipation propertiesHigher power outputIdeality factorPower densityDissipative propertiesGallium nitrideOptoelectronic characteristicsVisible light spectrumPower outputEpitaxial structureCrystal structureMaskless photolithographyOptical stabilityEfficient degradationCentral wavelengthLow Dislocation Density Homoepitaxy Ultraviolet-A Micro-LEDs Scale Down to 3 μm
Liu Y, Wang G, Feng F, Li Z, Xu K, Kwok H, Liu Z. Low Dislocation Density Homoepitaxy Ultraviolet-A Micro-LEDs Scale Down to 3 μm. IEEE Electron Device Letters 2024, 45: 641-644. DOI: 10.1109/led.2024.3368513.Peer-Reviewed Original ResearchDislocation densityIn-plane compressive stressHigh dislocation densitySeries resistanceCompressive stressIdeality factorStable emission wavelengthEnhanced crystal qualityEfficiency droopOptoelectronic performanceDevice levelMaterial levelSize effectCrystal qualityHeteroepitaxial substratesUniform emissionLattice mismatchMicro-LEDsHigh stressEmission wavelengthMinimum valueDevicesCm-2DroopSubstrate