2024
Low Dislocation Density Homoepitaxy Ultraviolet-A Micro-LEDs Scale Down to 3 μm
Liu Y, Wang G, Feng F, Li Z, Xu K, Kwok H, Liu Z. Low Dislocation Density Homoepitaxy Ultraviolet-A Micro-LEDs Scale Down to 3 μm. IEEE Electron Device Letters 2024, 45: 641-644. DOI: 10.1109/led.2024.3368513.Peer-Reviewed Original ResearchDislocation densityIn-plane compressive stressHigh dislocation densitySeries resistanceCompressive stressIdeality factorStable emission wavelengthEnhanced crystal qualityEfficiency droopOptoelectronic performanceDevice levelMaterial levelSize effectCrystal qualityHeteroepitaxial substratesUniform emissionLattice mismatchMicro-LEDsHigh stressEmission wavelengthMinimum valueDevicesCm-2DroopSubstrate
2023
Vertical GaN-on-GaN Trench Junction Barrier Schottky Diodes With a Slanted Sidewall
Liu X, Li B, Wu J, Li J, Yue W, Zhu R, Wang Q, Li X, Ben J, He W, Chiu H, Xu K, Zhong Z. Vertical GaN-on-GaN Trench Junction Barrier Schottky Diodes With a Slanted Sidewall. IEEE Journal Of The Electron Devices Society 2023, 12: 34-38. DOI: 10.1109/jeds.2023.3340512.Peer-Reviewed Original ResearchJunction Barrier SchottkyPower device figureState resistance RonHigh voltage applicationsFree-standing GaN substratesElectric field distributionSlanted sidewallsBreakdown voltage VBREdges of devicesVertical GaNJBS diodesVoltage applicationsDevice figureResistance RonHigh voltageGaN substrateField distributionSidewallsGW/cm2SchottkyGreat potentialDevicesVoltageRONDiodes