2000
Single carbon nanotube electronic devices
Johnson A, Lefebvre J, Radosavljevic M, Llaguno M, Lynch J. Single carbon nanotube electronic devices. AIP Conference Proceedings 2000, 544: 349-354. DOI: 10.1063/1.1342531.Peer-Reviewed Original ResearchNanotube FETsCarbon nanotube electronic devicesNanotube electronic devicesSilicon dioxide surfaceSingle-wall carbon nanotubesWall carbon nanotubesNanotube circuitsCarbon nanotubesElectronic devicesShadow maskDioxide surfaceNanotubesRecent progressFETResist systemCircuitElectrode pairsFabricationAFMDevicesMoleculesSeparationSurfaceMaskSingle-wall carbon nanotube based devices
Lefebvre J, Antonov R, Radosavljević M, Lynch J, Llaguno M, Johnson A. Single-wall carbon nanotube based devices. Carbon 2000, 38: 1745-1749. DOI: 10.1016/s0008-6223(00)00050-6.Peer-Reviewed Original ResearchElectron beam lithographySingle-wall carbon nanotubesNanotube circuitsAFM nanomanipulationBeam lithographyFabrication techniquesCarbon nanotubesQuantum dotsSWNTsMechanical deformationTube-tube junctionsMolecular adsorbatesDevicesDouble quantum dotNanomanipulationLithographyNanotubesQuantum wiresDotsElectrodeDiodesFunctionalityCircuitAdsorbates
1999
Single-wall carbon nanotube circuits assembled with an atomic force microscope
Lefebvre J, Lynch J, Llaguno M, Radosavljevic M, Johnson A. Single-wall carbon nanotube circuits assembled with an atomic force microscope. Applied Physics Letters 1999, 75: 3014-3016. DOI: 10.1063/1.125218.Peer-Reviewed Original ResearchAtomic force microscopeSingle-wall carbon nanotubesNanotube circuitsForce microscopeCarbon nanotube circuitsElectron beam lithographyMode atomic force microscopeBeam lithographyCarbon nanotubesSWNT bundlesQuantum dotsGate voltageTip-sample forcesNanotubesTunnel barrierDotsTop of oneCircuitMicroscopeLithographyTransmissionTip speedVoltageNumber of charges