Optical characterization of GaN:Eu microcrystals grown by the ammonothermal method
Xie K, Li T, Ren G, Wang L, Lu W, Shen L, Zhou H, Xu K. Optical characterization of GaN:Eu microcrystals grown by the ammonothermal method. Journal Of Alloys And Compounds 2024, 1008: 176776. DOI: 10.1016/j.jallcom.2024.176776.Peer-Reviewed Original ResearchGlow discharge mass spectrometryTime-resolved photoluminescenceLuminescent sitesPhotoluminescence excitationScanning electron microscopyEu3+ ionsExposed crystal facesEnergy transfer processAmmonothermal methodCharacteristic luminescenceLuminescence propertiesWurtzite crystal structureO2- ionsCrystal structureExcitation wavelengthMass spectrometryCrystal facesLuminescenceEu concentrationMicrocrystalsLuminescence peakPhotoluminescenceTransfer processOptical characterizationEu0Comparative analysis of microstructure, electrical and optical performance in sidewall etching process for GaN-based green micro-LED
Li X, Su X, Wang G, Chen J, Wang L, Song W, Xu K. Comparative analysis of microstructure, electrical and optical performance in sidewall etching process for GaN-based green micro-LED. Journal Of Physics D 2024, 57: 375108. DOI: 10.1088/1361-6463/ad55f9.Peer-Reviewed Original ResearchKelvin probe force microscopeGeometric phase analysisTransmission electron microscopyExternal quantum efficiencyTime-resolved photoluminescenceInductively coupled plasmaOptical performanceSidewall defectsEvolution of microstructureInductively coupled plasma etchingTetramethylammonium hydroxide treatmentBuild-in electric fieldMicro-LEDsNon-radiative recombination lossesGreen micro-LEDsSemi-polar surfacesSurface lattice relaxationSurface dangling bondsTetramethylammonium hydroxideNon-radiative recombination mechanismsNon-radiative recombination rateChip sizeTetramethylammonium hydroxide solutionForce microscopeEtching process