High-power AlGaN deep-ultraviolet micro-light-emitting diode displays for maskless photolithography
Feng F, Liu Y, Zhang K, Yang H, Hyun B, Xu K, Kwok H, Liu Z. High-power AlGaN deep-ultraviolet micro-light-emitting diode displays for maskless photolithography. Nature Photonics 2024, 1-8. DOI: 10.1038/s41566-024-01551-7.Peer-Reviewed Original ResearchMicro-light-emitting diodesMicro-LED displayMicro-LEDsMaskless photolithographySuperior light extraction efficiencyPeak external quantum efficiencyLight extraction efficiencyMicro-LED arrayExternal quantum efficiencyElectrical characterizationCircuit driverDeep ultravioletPhotoresist filmSpreading uniformityQuantum efficiencyEmission uniformityPhotolithographySemiconductor industryHeat dispersionMicro-displaysMaximum brightnessReflective layerPhotolithography applicationsOptimal performanceDiodesGaN-Based Freestanding Micro-LEDs With GHz Bandwidth and Low Efficiency Droop for Visible Light Communication
Huang J, Wang G, Xu H, Xu F, Zhi T, Chen W, Sang Y, Zhang D, Yu J, He H, Xu K, Tian P, Tao T, Liu B, Zhang R. GaN-Based Freestanding Micro-LEDs With GHz Bandwidth and Low Efficiency Droop for Visible Light Communication. IEEE Transactions On Electron Devices 2024, 71: 6826-6830. DOI: 10.1109/ted.2024.3456770.Peer-Reviewed Original ResearchVisible light communicationExternal quantum efficiencyModulation bandwidthQuantum-confined Stark effectQuantum barriersLight communicationMicro-LEDsEfficiency droopFree-space visible light communicationMicro-light-emitting diodesM-diameterM-diameter deviceImproved carrier transportLow efficiency droopData rateFree-spaceGHz bandwidthLight-emitting diodesOptical powerDefect densityCarrier transportBandwidthEnergy-efficient methodCarrier localizationStark effect