Low Dislocation Density Homoepitaxy Ultraviolet-A Micro-LEDs Scale Down to 3 μm
Liu Y, Wang G, Feng F, Li Z, Xu K, Kwok H, Liu Z. Low Dislocation Density Homoepitaxy Ultraviolet-A Micro-LEDs Scale Down to 3 μm. IEEE Electron Device Letters 2024, 45: 641-644. DOI: 10.1109/led.2024.3368513.Peer-Reviewed Original ResearchDislocation densityIn-plane compressive stressHigh dislocation densitySeries resistanceCompressive stressIdeality factorStable emission wavelengthEnhanced crystal qualityEfficiency droopOptoelectronic performanceDevice levelMaterial levelSize effectCrystal qualityHeteroepitaxial substratesUniform emissionLattice mismatchMicro-LEDsHigh stressEmission wavelengthMinimum valueDevicesCm-2DroopSubstrateMicrostructural and spectroscopic analysis of epitaxial lateral overgrowth GaN via the self-decomposing hexagonal graphene mask
Tao J, Xu Y, Li J, Cai X, Wang Y, Wang G, Cao B, Xu K. Microstructural and spectroscopic analysis of epitaxial lateral overgrowth GaN via the self-decomposing hexagonal graphene mask. Japanese Journal Of Applied Physics 2024, 63: 025503. DOI: 10.35848/1347-4065/ad1e88.Peer-Reviewed Original ResearchGraphene maskEpitaxial lateral overgrowth-GaNEpitaxial lateral overgrowthTwo-dimensional materialsGrowth of GaNHigh-quality GaNHexagonal grapheneELOG GaNGaN growth processGraphene surfaceThreading dislocation densityLattice mismatchGrapheneGaNLateral overgrowthPL spectraHeterogeneous substratesDislocation densityRelaxationGaN.Growth processStress relaxationSpectraNitrideGPa