Low Dislocation Density Homoepitaxy Ultraviolet-A Micro-LEDs Scale Down to 3 μm
Liu Y, Wang G, Feng F, Li Z, Xu K, Kwok H, Liu Z. Low Dislocation Density Homoepitaxy Ultraviolet-A Micro-LEDs Scale Down to 3 μm. IEEE Electron Device Letters 2024, 45: 641-644. DOI: 10.1109/led.2024.3368513.Peer-Reviewed Original ResearchDislocation densityIn-plane compressive stressHigh dislocation densitySeries resistanceCompressive stressIdeality factorStable emission wavelengthEnhanced crystal qualityEfficiency droopOptoelectronic performanceDevice levelMaterial levelSize effectCrystal qualityHeteroepitaxial substratesUniform emissionLattice mismatchMicro-LEDsHigh stressEmission wavelengthMinimum valueDevicesCm-2DroopSubstrate10.5 Gbps Visible Light Communication Systems Based on C-Plane Freestanding GaN Micro-LED
Rao Z, Shan X, Wang G, Jin Z, Lin R, Cui X, Liu R, Xu K, Tian P. 10.5 Gbps Visible Light Communication Systems Based on C-Plane Freestanding GaN Micro-LED. Journal Of Lightwave Technology 2024, 42: 4360-4364. DOI: 10.1109/jlt.2024.3363729.Peer-Reviewed Original ResearchData rateGaN micro-LEDMicro-LEDsVisible light communication systemHigh data rateMaximum data rateRecord data rateOFDM signal bandwidthC-planeSignal bandwidthModulation bandwidthCommunication performanceCommunication systemsHigh bandwidthGbpsOptimum sizeSize effectBandwidthOptoelectronic propertiesOFDM