High-power AlGaN deep-ultraviolet micro-light-emitting diode displays for maskless photolithography
Feng F, Liu Y, Zhang K, Yang H, Hyun B, Xu K, Kwok H, Liu Z. High-power AlGaN deep-ultraviolet micro-light-emitting diode displays for maskless photolithography. Nature Photonics 2024, 1-8. DOI: 10.1038/s41566-024-01551-7.Peer-Reviewed Original ResearchMicro-light-emitting diodesMicro-LED displayMicro-LEDsMaskless photolithographySuperior light extraction efficiencyPeak external quantum efficiencyLight extraction efficiencyMicro-LED arrayExternal quantum efficiencyElectrical characterizationCircuit driverDeep ultravioletPhotoresist filmSpreading uniformityQuantum efficiencyEmission uniformityPhotolithographySemiconductor industryHeat dispersionMicro-displaysMaximum brightnessReflective layerPhotolithography applicationsOptimal performanceDiodesGrowth and characterization of micro-LED based on GaN substrate
Wang G, Huang J, Wang Y, Tao T, Zhu X, Wang Z, Li K, Wang Y, Su X, Wang J, Liu B, Cao B, Xu K. Growth and characterization of micro-LED based on GaN substrate. Optics Express 2024, 32: 31463. DOI: 10.1364/oe.529771.Peer-Reviewed Original ResearchExternal quantum efficiencyMicro-LED chipResidual stressDislocation densityMicro-LEDsGaN-based micro-LEDReduced dislocation densityCarrier injectionQuantum efficiencyDislocation phenomenaHigher uniformitySuperior uniformityMicro-LED technologyGaN substratesPit distributionDominant mechanismChipDislocationHigh brightnessUniformityUltra-low-defect homoepitaxial micro-LEDs with enhanced efficiency and monochromaticity for high-PPI AR/MR displays
Liu Y, Wang G, Feng F, Zhanghu M, Yuan Z, Li Z, Xu K, Kwok H, Liu Z. Ultra-low-defect homoepitaxial micro-LEDs with enhanced efficiency and monochromaticity for high-PPI AR/MR displays. PhotoniX 2024, 5: 23. DOI: 10.1186/s43074-024-00137-4.Peer-Reviewed Original ResearchGaN-on-GaNOptoelectronic propertiesEfficiency droop ratioEmission wavelengthMicro-LEDsGaN-on-sapphireCrystal qualityMicro-displaysCm-2High luminanceMicro-display applicationsMicro-LED devicesGaN substratesSapphire substratesDroop ratioEfficiency droopSeries resistanceGallium nitrideEnhanced efficiencyStrong ambient lightComparative analysis of microstructure, electrical and optical performance in sidewall etching process for GaN-based green micro-LED
Li X, Su X, Wang G, Chen J, Wang L, Song W, Xu K. Comparative analysis of microstructure, electrical and optical performance in sidewall etching process for GaN-based green micro-LED. Journal Of Physics D 2024, 57: 375108. DOI: 10.1088/1361-6463/ad55f9.Peer-Reviewed Original ResearchKelvin probe force microscopeGeometric phase analysisTransmission electron microscopyExternal quantum efficiencyTime-resolved photoluminescenceInductively coupled plasmaOptical performanceSidewall defectsEvolution of microstructureInductively coupled plasma etchingTetramethylammonium hydroxide treatmentBuild-in electric fieldMicro-LEDsNon-radiative recombination lossesGreen micro-LEDsSemi-polar surfacesSurface lattice relaxationSurface dangling bondsTetramethylammonium hydroxideNon-radiative recombination mechanismsNon-radiative recombination rateChip sizeTetramethylammonium hydroxide solutionForce microscopeEtching process60‐4: Minimal Efficiency Degradation and Elevated Radiometric Power Density of Ultraviolet‐A Micro‐LED with Homoepitaxial Structure
Liu Y, Wang G, Feng F, Li Z, Liu Z, Xu K, Kwok H, Liu Z. 60‐4: Minimal Efficiency Degradation and Elevated Radiometric Power Density of Ultraviolet‐A Micro‐LED with Homoepitaxial Structure. SID Symposium Digest Of Technical Papers 2024, 55: 828-831. DOI: 10.1002/sdtp.17658.Peer-Reviewed Original ResearchSize-Dependent Characteristics of High-Bandwidth Photodetector Based on GaN Micro-LEDs and LEDs for High-Speed Visible Light Communication
Liao Y, Shan X, Rao Z, Wang G, Lin R, Cui X, Xu K, Tian P. Size-Dependent Characteristics of High-Bandwidth Photodetector Based on GaN Micro-LEDs and LEDs for High-Speed Visible Light Communication. Journal Of Lightwave Technology 2024, 42: 5902-5909. DOI: 10.1109/jlt.2024.3407777.Peer-Reviewed Original ResearchSize-dependent characteristicsHigh-speed visible light communicationHigh data ratePotential data rateHigh-speed VLC systemVisible light communicationOFDM schemeVLC systemEffect of bandwidthHigh-bandwidth photodetectorsData rateLight communicationBandwidth characteristicsGaN micro-LEDPD arrayHighest photocurrentIncident powerOptimized photodetectorHigh bandwidthPhotodetectorsOptimal sizeMicro-LEDsGbpsSize of photodetectorBandwidthFlexible arrays of GaN-based Micro-LEDs fabricated on different substrates by a laser lift-off process
Yue L, Xu J, Wang X, Zhou J, Wang Y, Yao L, Niu M, Wang M, Cao B, Xu Y, Wang J, Xu K. Flexible arrays of GaN-based Micro-LEDs fabricated on different substrates by a laser lift-off process. Japanese Journal Of Applied Physics 2024, 63: 051007. DOI: 10.35848/1347-4065/ad46af.Peer-Reviewed Original ResearchMicro-LED arrayLaser lift-offMicro-LEDsPolyethylene terephthalateLaser lift-off processHigher laser energy densityLift-off processGaN-based micro-LEDLaser energy densityLaser lift‐off technologyBending radiusFlexible displaysLift-offThreshold voltageCopper foilGallium nitrideCu substrateEnergy densitySapphire substratesInternet-of-Things eraFlexible arrayInternet-of-ThingsEL spectraKrF excimer laser systemP‐11.6: Minimal efficiency degradation and elevated radiometric power density of Ultraviolet‐A micro‐LED with homoepitaxial structure
Liu Y, Wang G, Feng F, Li Z, Liu Z, Xu K, Kwok H, Liu Z. P‐11.6: Minimal efficiency degradation and elevated radiometric power density of Ultraviolet‐A micro‐LED with homoepitaxial structure. SID Symposium Digest Of Technical Papers 2024, 55: 1305-1308. DOI: 10.1002/sdtp.17348.Peer-Reviewed Original ResearchMicro-LEDsLow ideality factorHeat dissipation propertiesHigher power outputIdeality factorPower densityDissipative propertiesGallium nitrideOptoelectronic characteristicsVisible light spectrumPower outputEpitaxial structureCrystal structureMaskless photolithographyOptical stabilityEfficient degradationCentral wavelengthLow Dislocation Density Homoepitaxy Ultraviolet-A Micro-LEDs Scale Down to 3 μm
Liu Y, Wang G, Feng F, Li Z, Xu K, Kwok H, Liu Z. Low Dislocation Density Homoepitaxy Ultraviolet-A Micro-LEDs Scale Down to 3 μm. IEEE Electron Device Letters 2024, 45: 641-644. DOI: 10.1109/led.2024.3368513.Peer-Reviewed Original ResearchDislocation densityIn-plane compressive stressHigh dislocation densitySeries resistanceCompressive stressIdeality factorStable emission wavelengthEnhanced crystal qualityEfficiency droopOptoelectronic performanceDevice levelMaterial levelSize effectCrystal qualityHeteroepitaxial substratesUniform emissionLattice mismatchMicro-LEDsHigh stressEmission wavelengthMinimum valueDevicesCm-2DroopSubstrate10.5 Gbps Visible Light Communication Systems Based on C-Plane Freestanding GaN Micro-LED
Rao Z, Shan X, Wang G, Jin Z, Lin R, Cui X, Liu R, Xu K, Tian P. 10.5 Gbps Visible Light Communication Systems Based on C-Plane Freestanding GaN Micro-LED. Journal Of Lightwave Technology 2024, 42: 4360-4364. DOI: 10.1109/jlt.2024.3363729.Peer-Reviewed Original ResearchData rateGaN micro-LEDMicro-LEDsVisible light communication systemHigh data rateMaximum data rateRecord data rateOFDM signal bandwidthC-planeSignal bandwidthModulation bandwidthCommunication performanceCommunication systemsHigh bandwidthGbpsOptimum sizeSize effectBandwidthOptoelectronic propertiesOFDM