Microstructural and spectroscopic analysis of epitaxial lateral overgrowth GaN via the self-decomposing hexagonal graphene mask
Tao J, Xu Y, Li J, Cai X, Wang Y, Wang G, Cao B, Xu K. Microstructural and spectroscopic analysis of epitaxial lateral overgrowth GaN via the self-decomposing hexagonal graphene mask. Japanese Journal Of Applied Physics 2024, 63: 025503. DOI: 10.35848/1347-4065/ad1e88.Peer-Reviewed Original ResearchGraphene maskEpitaxial lateral overgrowth-GaNEpitaxial lateral overgrowthTwo-dimensional materialsGrowth of GaNHigh-quality GaNHexagonal grapheneELOG GaNGaN growth processGraphene surfaceThreading dislocation densityLattice mismatchGrapheneGaNLateral overgrowthPL spectraHeterogeneous substratesDislocation densityRelaxationGaN.Growth processStress relaxationSpectraNitrideGPa