Phase-engineered low-resistance contacts for ultrathin MoS2 transistors
Kappera R, Voiry D, Yalcin SE, Branch B, Gupta G, Mohite AD, Chhowalla M. Phase-engineered low-resistance contacts for ultrathin MoS2 transistors. Nature Materials 2014, 13: 1128-1134. PMID: 25173581, DOI: 10.1038/nmat4080.Peer-Reviewed Original ResearchField-effect transistorsSubthreshold swing valueExcellent current saturationUltrathin molybdenum disulfideLow resistance contactsSemiconducting 2H phaseContact resistanceSwing valueHigh resistance contactsElectrical characteristicsMoS2 transistorsCarrier injectionPhase engineeringPhase electrodesDrive currentCurrent saturationFET performanceGate biasMolybdenum disulfideEnergy bandgapT phaseMobility valuesTransistorsDifferent metalsMoS2