Metallic 1T phase source/drain electrodes for field effect transistors from chemical vapor deposited MoS2
Kappera R, Voiry D, Yalcin S, Jen W, Acerce M, Torrel S, Branch B, Lei S, Chen W, Najmaei S, Lou J, Ajayan P, Gupta G, Mohite A, Chhowalla M. Metallic 1T phase source/drain electrodes for field effect transistors from chemical vapor deposited MoS2. APL Materials 2014, 2: 092516. DOI: 10.1063/1.4896077.Peer-Reviewed Original ResearchSource/drain electrodesContact resistanceDrain electrodesLow contact resistanceLarge contact resistancePerformance of devicesDimensional transition metal dichalcogenidesField-effect transistorsGood mobility valuesTransition metal dichalcogenidesDirect band gapHigh resistance contactsResistance contactsDevice propertiesEffect transistorsFET performanceChemical vaporElectronic materialsBulk materialPhase transformationResistance electrodesElectrodeMetal dichalcogenidesBand gapT phasePhase-engineered low-resistance contacts for ultrathin MoS2 transistors
Kappera R, Voiry D, Yalcin SE, Branch B, Gupta G, Mohite AD, Chhowalla M. Phase-engineered low-resistance contacts for ultrathin MoS2 transistors. Nature Materials 2014, 13: 1128-1134. PMID: 25173581, DOI: 10.1038/nmat4080.Peer-Reviewed Original ResearchField-effect transistorsSubthreshold swing valueExcellent current saturationUltrathin molybdenum disulfideLow resistance contactsSemiconducting 2H phaseContact resistanceSwing valueHigh resistance contactsElectrical characteristicsMoS2 transistorsCarrier injectionPhase engineeringPhase electrodesDrive currentCurrent saturationFET performanceGate biasMolybdenum disulfideEnergy bandgapT phaseMobility valuesTransistorsDifferent metalsMoS2