2015
Direct Imaging of Charge Transport in Progressively Reduced Graphene Oxide Using Electrostatic Force Microscopy
Yalcin SE, Galande C, Kappera R, Yamaguchi H, Martinez U, Velizhanin KA, Doorn SK, Dattelbaum AM, Chhowalla M, Ajayan PM, Gupta G, Mohite AD. Direct Imaging of Charge Transport in Progressively Reduced Graphene Oxide Using Electrostatic Force Microscopy. ACS Nano 2015, 9: 2981-2988. PMID: 25668323, DOI: 10.1021/nn507150q.Peer-Reviewed Original ResearchElectrostatic force microscopyGraphene oxideOptical propertiesDirect imagingThin-film optoelectronic applicationsForce microscopyEFM measurementsOptoelectronic propertiesCharge transportDevelopment of GOQuantum chemistry calculationsOptical spectroscopyGood electrical conductivityOptoelectronic devicesOptoelectronic applicationsFlexible thin filmsPhotoluminescence imagingChemistry calculationsThin filmsPhase transitionTheoretical modelingMultifunctional materialsPotential barrierBulk quantitiesCharge propagation
2014
Visualization of charge propagation along individual pili proteins using ambient electrostatic force microscopy
Malvankar NS, Yalcin SE, Tuominen MT, Lovley DR. Visualization of charge propagation along individual pili proteins using ambient electrostatic force microscopy. Nature Nanotechnology 2014, 9: 1012-1017. PMID: 25326694, DOI: 10.1038/nnano.2014.236.Peer-Reviewed Original ResearchConceptsElectrostatic force microscopyPili proteinBacterial respirationForce microscopyProteinElectron exchangeCharge flowRespirationCellsMicroscopy
2012
Electrostatic Force Microscopy and Spectral Studies of Electron Attachment to Single Quantum Dots on Indium Tin Oxide Substrates
Yalcin S, Yang B, Labastide J, Barnes M. Electrostatic Force Microscopy and Spectral Studies of Electron Attachment to Single Quantum Dots on Indium Tin Oxide Substrates. The Journal Of Physical Chemistry C 2012, 116: 15847-15853. DOI: 10.1021/jp305857d.Peer-Reviewed Original ResearchQuantum dotsElectron attachmentQuantum-confined Stark effectIndividual CdSe/ZnS quantum dotsEFM measurementsElectrostatic force microscopy (EFM) studyMeV red shiftSingle quantum dotIndividual quantum dotsElectrostatic force microscopyOxide substratesTin-doped indium oxide (ITO) substratesRemoval of electronsForce microscopy studiesCdSe/ZnS quantum dotsIndium tin oxide (ITO) substrateFermi level mismatchStark effectUnambiguous signatureZnS quantum dotsTin oxide substratesRecombination energyPhotoluminescence imagingSpectral modulationExcess electrons
2011
Spectral Properties of Multiply Charged Semiconductor Quantum Dots
Yalcin SE, Labastide JA, Sowle DL, Barnes MD. Spectral Properties of Multiply Charged Semiconductor Quantum Dots. Nano Letters 2011, 11: 4425-4430. PMID: 21905683, DOI: 10.1021/nl2026103.Peer-Reviewed Original ResearchElectrostatic force microscopyQuantum dotsSingle CdSe/ZnS quantum dotsSemiconductor quantum dotsBand-edge electronsBand edge luminescenceCdSe/ZnS quantum dotsElectronic perturbationZnS quantum dotsRecombination energyExcess electronsBlue shiftForce microscopyCantilever responseQD samplesQD luminescenceElectronsExcess chargeSpectral propertiesDotsSignificant fractionLuminescence