Metallic 1T phase source/drain electrodes for field effect transistors from chemical vapor deposited MoS2
Kappera R, Voiry D, Yalcin S, Jen W, Acerce M, Torrel S, Branch B, Lei S, Chen W, Najmaei S, Lou J, Ajayan P, Gupta G, Mohite A, Chhowalla M. Metallic 1T phase source/drain electrodes for field effect transistors from chemical vapor deposited MoS2. APL Materials 2014, 2: 092516. DOI: 10.1063/1.4896077.Peer-Reviewed Original ResearchSource/drain electrodesContact resistanceDrain electrodesLow contact resistanceLarge contact resistancePerformance of devicesDimensional transition metal dichalcogenidesField-effect transistorsGood mobility valuesTransition metal dichalcogenidesDirect band gapHigh resistance contactsResistance contactsDevice propertiesEffect transistorsFET performanceChemical vaporElectronic materialsBulk materialPhase transformationResistance electrodesElectrodeMetal dichalcogenidesBand gapT phase