Direct Interfacial Electron Transfer from High-Potential Porphyrins into Semiconductor Surfaces: A Comparison of Linkers and Anchoring Groups
Jiang J, Spies J, Swierk J, Matula A, Regan K, Romano N, Brennan B, Crabtree R, Batista V, Schmuttenmaer C, Brudvig G. Direct Interfacial Electron Transfer from High-Potential Porphyrins into Semiconductor Surfaces: A Comparison of Linkers and Anchoring Groups. The Journal Of Physical Chemistry C 2018, 122: 13529-13539. DOI: 10.1021/acs.jpcc.7b12405.Peer-Reviewed Original ResearchMetal oxide surfacesDirect interfacial electron transferTime-resolved terahertzInterfacial electron transferOxide surfaceSemiconductor surfacesPhotoelectrochemical stabilitySnO2 substratePhotoelectrochemical cellsInjection yieldTransient spectroscopySurfaceAqueous photoelectrochemical cellDye photosensitizerIET dynamicsTerahertzElectron transferSeries of linkersDirect contactSpectroscopyAbsorption spectroscopyTransferTransient absorption spectroscopyOverall length