2024
Nucleation study of AlN crystal growth on 6H-SiC substrates using the MOCVD
Lu Z, Wang Y, Wang L, Xu Y, Liu Y, Xu K. Nucleation study of AlN crystal growth on 6H-SiC substrates using the MOCVD. Applied Physics Letters 2024, 125: 242101. DOI: 10.1063/5.0238459.Peer-Reviewed Original ResearchFormation energyNucleation morphologyAlN crystal growthCrystal growthMolecular dynamics simulationsMetal organic chemical vapor deposition technologyFilm growth processIsland growth modeAlN thin filmsChemical vapor deposition technologyN atomsThin film growth processAdsorption capacityVapor deposition technologyStronger adsorption capacityAtomic structureAdsorption energyAl atomsDynamics simulationsThin filmsGrowth modeHexagonal AlNDeposition technologyAlNStacking faults
2023
Epitaxial Growth of High-Quality GaN Films Based on Bilayer Graphene
Zhou J, Xu Y, Wang X, Wang Y, Yue L, Wang J, Cao B, Xu K. Epitaxial Growth of High-Quality GaN Films Based on Bilayer Graphene. 2023, 00: 161-164. DOI: 10.1109/sslchinaifws60785.2023.10399753.Peer-Reviewed Original ResearchGaN filmsAlN/sapphire templatesEpitaxial GaN thin filmsGrowth of GaN filmsGrowth of high-quality GaN filmsGaN thin filmsHigh-quality GaN filmsEpitaxial growthOptoelectronic devicesHigh-performance devicesNucleation layerGrapheneAlN/sapphireFlexible optoelectronic devicesThin filmsFilm formation processGaNFilm stressDislocation densitySurface roughnessFilmsFormation processEpitaxyGrowth conditionsBilayerDefect evolution in GaN thin film heterogeneously integrated with CMOS-compatible Si(100) substrate by ion-cutting technology
Shi H, Yi A, Ding J, Liu X, Qin Q, Yi J, Hu J, Wang M, Cai D, Wang J, Xu K, Mu F, Suga T, Heller R, Wang M, Zhou S, Xu W, Huang K, You T, Ou X. Defect evolution in GaN thin film heterogeneously integrated with CMOS-compatible Si(100) substrate by ion-cutting technology. Science China Information Sciences 2023, 66: 219403. DOI: 10.1007/s11432-022-3668-0.Peer-Reviewed Original Research