Nucleation study of AlN crystal growth on 6H-SiC substrates using the MOCVD
Lu Z, Wang Y, Wang L, Xu Y, Liu Y, Xu K. Nucleation study of AlN crystal growth on 6H-SiC substrates using the MOCVD. Applied Physics Letters 2024, 125: 242101. DOI: 10.1063/5.0238459.Peer-Reviewed Original ResearchFormation energyNucleation morphologyAlN crystal growthCrystal growthMolecular dynamics simulationsMetal organic chemical vapor deposition technologyFilm growth processIsland growth modeAlN thin filmsChemical vapor deposition technologyN atomsThin film growth processAdsorption capacityVapor deposition technologyStronger adsorption capacityAtomic structureAdsorption energyAl atomsDynamics simulationsThin filmsGrowth modeHexagonal AlNDeposition technologyAlNStacking faults