Nanoindentation mechanical studies of bulk AlN single crystals with different orientations
Zhou H, Chen K, Gao X, Zheng S, Zeng X, Wang C, Wang Y, Pan Y, Xu K. Nanoindentation mechanical studies of bulk AlN single crystals with different orientations. Semiconductor Science And Technology 2024, 40: 015008. DOI: 10.1088/1361-6641/ad98b8.Peer-Reviewed Original ResearchIndentation depthYoung's modulusPhysical vapor transportIncreasing indentation depthIndentation size effectNano-mechanical testingLuminescence quenchingSmall Young's modulusCrystal planesSingle crystalsCrystal substratesRaman spectroscopyMechanical propertiesPanchromatic CL imagesLocal stressAlN single crystalsSurface morphologyMechanism studyAluminum nitrideProperties of AlNSlip regionCrystalIndentationStructural defectsModulusStudy on Raman scattering spectroscopy of Mn-doped GaN grown by the ammonothermal method
Lu W, Li T, Ren G, Xia Z, Xie K, Li S, Shen L, Xu K. Study on Raman scattering spectroscopy of Mn-doped GaN grown by the ammonothermal method. CrystEngComm 2024, 26: 2166-2171. DOI: 10.1039/d4ce00093e.Peer-Reviewed Original ResearchRaman scattering spectroscopyValence stateGlow discharge mass spectrometryValence state of MnAmmonothermal methodX-ray photoelectron spectroscopyStates of MnGaN crystalsDoping of MnInteraction potential energyRaman scattering spectraDoping of MgPhotoelectron spectroscopyMn 2+Mn-doped GaNMass spectrometryMn 3X-rayScattering spectroscopyCrystalUnintentional dopingSpectroscopyPotential energyValenceGaNDislocation slip systems in c-plane and m-plane AlN single crystals under nano-indentation
Chen J, Chen K, Su X, Niu M, Wang Q, Xu K. Dislocation slip systems in c-plane and m-plane AlN single crystals under nano-indentation. Thin Solid Films 2024, 791: 140240. DOI: 10.1016/j.tsf.2024.140240.Peer-Reviewed Original Research