2025
On the dependence of internal stress on dislocation inclination pattern in HVPE-GaN substrates
Zhou F, Li Z, Liu M, Qiu Y, Yin T, Xu Y, Zhang Y, Niu M, Cai D, Wang J, Xu K. On the dependence of internal stress on dislocation inclination pattern in HVPE-GaN substrates. Applied Physics Letters 2025, 126: 082101. DOI: 10.1063/5.0255742.Peer-Reviewed Original ResearchInternal stressX-ray topographyDislocation configurationsDislocation patternsHVPE GaN substratesInclination of threading dislocationsTwo-photon excited photoluminescenceCombined Raman spectroscopyDependence of internal stressesRaman spectroscopyX-rayExcited photoluminescenceHydride vapor phase epitaxyVapor phase epitaxyDistribution of internal stressesDislocationInternal stress distributionPerformance of GaN devicesClassical elasticity theoryEpitaxial growthPhase epitaxyGaN substratesGaN devicesStress distributionElasticity theory
2024
Study on Raman scattering spectroscopy of Mn-doped GaN grown by the ammonothermal method
Lu W, Li T, Ren G, Xia Z, Xie K, Li S, Shen L, Xu K. Study on Raman scattering spectroscopy of Mn-doped GaN grown by the ammonothermal method. CrystEngComm 2024, 26: 2166-2171. DOI: 10.1039/d4ce00093e.Peer-Reviewed Original ResearchRaman scattering spectroscopyValence stateGlow discharge mass spectrometryValence state of MnAmmonothermal methodX-ray photoelectron spectroscopyStates of MnGaN crystalsDoping of MnInteraction potential energyRaman scattering spectraDoping of MgPhotoelectron spectroscopyMn 2+Mn-doped GaNMass spectrometryMn 3X-rayScattering spectroscopyCrystalUnintentional dopingSpectroscopyPotential energyValenceGaN
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